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UPA809T Datasheet(PDF) 1 Page - NEC

Part No. UPA809T
Description  MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD
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Maker  NEC [NEC]
Homepage  http://www.nec.com/
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UPA809T Datasheet(HTML) 1 Page - NEC

 
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SILICON TRANSISTOR
FEATURES
PACKAGE DRAWINGS
Low Voltage Operation, Low Phase Distortion
(Unit: mm)
Low Noise
NF = 1.5 dB TYP. @VCE = 3 V, IC = 7 mA, f = 2 GHz
NF = 1.7 dB TYP. @VCE = 1 V, IC = 3 mA, f = 2 GHz
Large Absolute Maximum Collector Current
IC = 100 mA
A Mini Mold Package Adopted
Built-in 2 Transistors (2
× 2SC5193)
ORDERING INFORMATION
PART NUMBER
QUANTITY
PACKING STYLE
µPA809T
Loose products
Embossed tape 8 mm wide. Pin 6 (Q1
(50 PCS)
Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
µPA809T-T1
Taping products
(3 KPCS/Reel)
Remark
If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
VCBO
9V
Collector to Emitter Voltage
VCEO
6V
Emitter to Base Voltage
VEBO
2V
Collector Current
IC
100
mA
Total Power Dissipation
PT
150 in 1 element
mW
200 in 2 elementsNote
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg
–65 to +150
˚C
Note
110 mW must not be exceeded in 1 element.
µPA809T
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.
The information in this document is subject to change without notice.
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) MINI MOLD
PIN CONFIGURATION (Top View)
©
1995
PRELIMINARY DATA SHEET
Printed in Japan
Document No. ID-3643
(O.D. No. ID-9150)
Date Published April 1995 P
2.1±0.1
1.25±0.1
65
4
Q1
Q2
12
3
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Emitter (Q2)
5. Base (Q2)
6. Base (Q1)


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