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UPA807T Datasheet(PDF) 1 Page - NEC

Part No. UPA807T
Description  MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS SUPER MINI MOLD
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Maker  NEC [NEC]
Homepage  http://www.nec.com/
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UPA807T Datasheet(HTML) 1 Page - NEC

   
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SILICON TRANSISTOR
FEATURES
Low Current, High Gain
|S21e|2 = 9 dB TYP. @VCE = 2 V, IC = 7 mA, f = 2 GHz
|S21e|2 = 8.5 dB TYP. @VCE = 1 V, IC = 5 mA, f = 2 GHz
A Super Mini Mold Package Adopted
Built-in 2 Transistors (2
× 2SC5179)
ORDERING INFORMATION
PART NUMBER
QUANTITY
PACKING STYLE
µPA807T
Loose products
(50 PCS)
µPA807T-T1
Taping products
(3 KPCS/Reel)
Remark If you require an evaluation sample, please contact an
NEC Sales Representative. (Unit sample quantity is 50
pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
VCBO
5V
Collector to Emitter Voltage
VCEO
3V
Emitter to Base Voltage
VEBO
2V
Collector Current
IC
10
mA
Total Power Dissipation
PT
30 in 1 element
mW
60 in 2 elements
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
–65 to +150
°C
µPA807T
Document No. P12153EJ2V0DS00 (2nd edition)
(Previous No. ID-3641)
Date Published
November 1996 N
Printed in Japan
MICROWAVE LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) SUPER MINI MOLD
2.1±0.1
1.25±0.1
PACKAGE DRAWINGS
(Unit: mm)
©
1994
DATA SHEET
©
1995
65
4
12
3
Q1
Q2
PIN CONNECTIONS
PIN CONFIGURATION (Top View)
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Emitter (Q2)
5. Base (Q2)
6. Base (Q1)
Embossed tape 8 mm wide. Pin 6
(Q1 Base), Pin 5 (Q2 Base), Pin 4
(Q2 Emitter) face to perforation
side of the tape.
This device uses radio frequency technology. Take due precautions to protect it from excessive input levels such as static electricity.


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