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CA3127E Datasheet(PDF) 2 Page - Intersil Corporation

Part # CA3127E
Description  High Frequency NPN Transistor Array
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Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

CA3127E Datasheet(HTML) 2 Page - Intersil Corporation

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5-2
CA3127
Absolute Maximum Ratings
Thermal Information
The following ratings apply for each transistor in the device
Collector-to-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . 15V
Collector-to-Base Voltage, VCBO. . . . . . . . . . . . . . . . . . . . . . . 20V
Collector-to-Substrate Voltage, VCIO (Note 1). . . . . . . . . . . . . 20V
Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA
Operating Conditions
Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC
Thermal Resistance (Typical, Note 2)
θ
JA (
oC/W)
PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
90
SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . .
175
Maximum Power Dissipation, PD (Any One Transistor). . . . . . 85mW
Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . 175oC
Maximum Junction Temperature (Plastic Packages). . . . . . . . 150oC
Maximum Storage Temperature Range . . . . . . . . . -65oC to 150oC
Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300oC
(SOIC - Lead Tips Only)
CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation
of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
NOTES:
1. The collector of each transistor of the CA3127 is isolated from the substrate by an integral diode. The substrate (Terminal 5) must be con-
nected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action.
2.
θ
JA is measured with the component mounted on an evaluation PC board in free air.
Electrical Specifications
TA = 25
oC
PARAMETER
TEST CONDITIONS
MIN
TYP
MAX
UNITS
DC CHARACTERISTICS (For Each Transistor)
Collector-to-Base Breakdown Voltage
IC = 10µA, IE = 0
20
32
-
V
Collector-to-Emitter Breakdown Voltage
IC = 1mA, IB = 0
15
24
-
V
Collector-to-Substrate Breakdown-Voltage
IC1 = 10µA, IB = 0, IE = 0
20
60
-
V
Emitter-to-Base Breakdown Voltage (Note 3)
IE = 10µA, IC = 0
4
5.7
-
V
Collector-Cutoff-Current
VCE = 10V IB = 0
-
-
0.5
µA
Collector-Cutoff-Current
VCB = 10V, IE = 0
-
-
40
nA
DC Forward-Current Transfer Ratio
VCE = 6V
IC = 5mA
35
88
-
IC = 1mA
40
90
-
IC = 0.1mA
35
85
-
Base-to-Emitter Voltage
VCE = 6V
IC = 5mA
0.71
0.81
0.91
V
IC = 1mA
0.66
0.76
0.86
V
IC = 0.1mA
0.60
0.70
0.80
V
Collector-to-Emitter Saturation Voltage
IC = 10mA, IB = 1mA
-
0.26
0.50
V
Magnitude of Difference in VBE
Q1 and Q2 Matched
VCE = 6V, IC = 1mA
-
0.5
5
mV
Magnitude of Difference in IB
-
0.2
3
µA
DYNAMIC CHARACTERISTICS
Noise Figure
f = 100kHz, RS = 500Ω, IC = 1mA
-
2.2
-
dB
Gain-Bandwidth Product
VCE = 6V, IC = 5mA
-
1.15
-
GHz
Collector-to-Base Capacitance
VCB = 6V, f = 1MHz
-
See
Fig. 5
-pF
Collector-to-Substrate Capacitance
VCI = 6V, f = 1MHz
-
-
pF
Emitter-to-Base Capacitance
VBE = 4V, f = 1MHz
-
-
pF
Voltage Gain
VCE = 6V, f = 10MHz, RL = 1kΩ, IC = 1mA
-
28
-
dB
Power Gain
Cascode Configuration
f = 100MHz, V+ = 12V, IC = 1mA
27
30
-
dB
Noise Figure
-
3.5
-
dB
Input Resistance
Common-Emitter Configuration
VCE = 6V, IC = 1mA, f = 200 MHz
-
400
-
Output Resistance
-
4.6
-
k
Input Capacitance
-
3.7
-
pF
Output Capacitance
-2-
pF
Magnitude of Forward Transadmittance
-
24
-
mS
NOTE:
3. When used as a zener for reference voltage, the device must not be subjected to more than 0.1mJ of energy from any possible capacitance
or electrostatic discharge in order to prevent degradation of the junction. Maximum operating zener current should be less than 10mA.


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