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CA3127E Datasheet(PDF) 2 Page - Intersil Corporation |
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CA3127E Datasheet(HTML) 2 Page - Intersil Corporation |
2 / 7 page 5-2 CA3127 Absolute Maximum Ratings Thermal Information The following ratings apply for each transistor in the device Collector-to-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . 15V Collector-to-Base Voltage, VCBO. . . . . . . . . . . . . . . . . . . . . . . 20V Collector-to-Substrate Voltage, VCIO (Note 1). . . . . . . . . . . . . 20V Collector Current, IC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20mA Operating Conditions Temperature Range . . . . . . . . . . . . . . . . . . . . . . . . . -55oC to 125oC Thermal Resistance (Typical, Note 2) θ JA ( oC/W) PDIP Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90 SOIC Package . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 175 Maximum Power Dissipation, PD (Any One Transistor). . . . . . 85mW Maximum Junction Temperature (Die) . . . . . . . . . . . . . . . . . . 175oC Maximum Junction Temperature (Plastic Packages). . . . . . . . 150oC Maximum Storage Temperature Range . . . . . . . . . -65oC to 150oC Maximum Lead Temperature (Soldering 10s) . . . . . . . . . . . . . 300oC (SOIC - Lead Tips Only) CAUTION: Stresses above those listed in “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. NOTES: 1. The collector of each transistor of the CA3127 is isolated from the substrate by an integral diode. The substrate (Terminal 5) must be con- nected to the most negative point in the external circuit to maintain isolation between transistors and to provide for normal transistor action. 2. θ JA is measured with the component mounted on an evaluation PC board in free air. Electrical Specifications TA = 25 oC PARAMETER TEST CONDITIONS MIN TYP MAX UNITS DC CHARACTERISTICS (For Each Transistor) Collector-to-Base Breakdown Voltage IC = 10µA, IE = 0 20 32 - V Collector-to-Emitter Breakdown Voltage IC = 1mA, IB = 0 15 24 - V Collector-to-Substrate Breakdown-Voltage IC1 = 10µA, IB = 0, IE = 0 20 60 - V Emitter-to-Base Breakdown Voltage (Note 3) IE = 10µA, IC = 0 4 5.7 - V Collector-Cutoff-Current VCE = 10V IB = 0 - - 0.5 µA Collector-Cutoff-Current VCB = 10V, IE = 0 - - 40 nA DC Forward-Current Transfer Ratio VCE = 6V IC = 5mA 35 88 - IC = 1mA 40 90 - IC = 0.1mA 35 85 - Base-to-Emitter Voltage VCE = 6V IC = 5mA 0.71 0.81 0.91 V IC = 1mA 0.66 0.76 0.86 V IC = 0.1mA 0.60 0.70 0.80 V Collector-to-Emitter Saturation Voltage IC = 10mA, IB = 1mA - 0.26 0.50 V Magnitude of Difference in VBE Q1 and Q2 Matched VCE = 6V, IC = 1mA - 0.5 5 mV Magnitude of Difference in IB - 0.2 3 µA DYNAMIC CHARACTERISTICS Noise Figure f = 100kHz, RS = 500Ω, IC = 1mA - 2.2 - dB Gain-Bandwidth Product VCE = 6V, IC = 5mA - 1.15 - GHz Collector-to-Base Capacitance VCB = 6V, f = 1MHz - See Fig. 5 -pF Collector-to-Substrate Capacitance VCI = 6V, f = 1MHz - - pF Emitter-to-Base Capacitance VBE = 4V, f = 1MHz - - pF Voltage Gain VCE = 6V, f = 10MHz, RL = 1kΩ, IC = 1mA - 28 - dB Power Gain Cascode Configuration f = 100MHz, V+ = 12V, IC = 1mA 27 30 - dB Noise Figure - 3.5 - dB Input Resistance Common-Emitter Configuration VCE = 6V, IC = 1mA, f = 200 MHz - 400 - Ω Output Resistance - 4.6 - k Ω Input Capacitance - 3.7 - pF Output Capacitance -2- pF Magnitude of Forward Transadmittance - 24 - mS NOTE: 3. When used as a zener for reference voltage, the device must not be subjected to more than 0.1mJ of energy from any possible capacitance or electrostatic discharge in order to prevent degradation of the junction. Maximum operating zener current should be less than 10mA. |
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