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UPA806T Datasheet(PDF) 2 Page - NEC

Part No. UPA806T
Description  MICROWAVE LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD
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Maker  NEC [NEC]
Homepage  http://www.nec.com/
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UPA806T Datasheet(HTML) 2 Page - NEC

   
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µPA806T
2
ELECTRICAL CHARACTERISTICS (TA = 25
°C)
PARAMETER
SYMBOL
CONDITION
MIN.
TYP.
MAX.
UNIT
Collector Cutoff Current
ICBO
VCB = 5 V, IE = 0
0.1
µA
Emitter Cutoff Current
IEBO
VEB = 1 V, IC = 0
0.1
µA
DC Current Gain
hFE
VCE = 3 V, IC = 10 mANote 1
75
150
Gain Bandwidth Product
fT
VCE = 3 V, IC = 10 mA, f = 2 GHz
12
GHz
Feed-back Capacitance
Cre
VCB = 3 V, IE = 0, f = 1 MHzNote 2
0.4
0.7
pF
Insertion Power Gain
|S21|2
VCE = 3 V, IC = 10 mA, f = 2 GHz
7
8.5
dB
Noise Figure
NF
VCE = 3 V, IC = 3 mA, f = 2 GHz
1.5
2.5
dB
hFE Ratio
hFE1/hFE2
VCE = 3 V, IC = 10 mA
0.85
A smaller value among
hFE of hFE1 = Q1, Q2
A larger value among
hFE of hFE2 = Q1, Q2
Notes 1. Pulse Measurement: Pw
≤ 350
µs, Duty cycle ≤ 2 %
2. Measured with 3-pin bridge, emitter and case should be connected to guard pin of bridge.
hFE CLASSIFICATION
Rank
KB
Marking
T83
hFE Value
75 to 150
TYPICAL CHARACTERISTICS (TA = 25
°C)
50
100
150
100
0
Ambient Temperature TA (°C)
200
Free Air
TOTAL POWER DISSIPATION
vs. AMBIENT TEMPERATURE
0
10
0.5
1.0
Base to Emitter Voltage VBE (V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
20
30
40
50
VCE = 3 V
2 Elements
in
Total
Per
Element


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