NDF08N50ZH datasheet(3/6 Pages) ONSEMI

Part #	NDF08N50ZH

Description	N-Channel Power MOSFET 500 V, 0.85

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NDF08N50Z

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TYPICAL CHARACTERISTICS

0.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

16.0

18.0

20.0

0.0

5.0

10.0

15.0

20.0

25.0

VDS, DRAIN−TO−SOURCE VOLTAGE (V)

Figure 1. On−Region Characteristics

7.0 V

VGS = 10 V

6.5 V

6.0 V

5.5 V

5.0 V

8.0 V

0.0

2.0

4.0

6.0

8.0

10.0

12.0

14.0

16.0

18.0

20.0

34

5678

9

10

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 2. Transfer Characteristics

VDS = 25 V

TJ = 150°C

TJ = −55°C

TJ = 25°C

0.65

0.70

0.75

0.80

0.85

0.90

0.95

1.00

5.5

6.0

6.5

7.0

7.5

8.0

8.5

9.0

9.5

10

VGS, GATE−TO−SOURCE VOLTAGE (V)

Figure 3. On−Region versus Gate−to−Source

Voltage

ID = 3.6 A

TJ = 25°C

0.50

0.55

0.60

0.65

0.70

0.75

0.80

0.85

0.90

0.95

1.00

0.0 1.0 2.0 3.0 4.0 5.0 6.0 7.0 8.0 9.0 10

TJ = 25°C

ID, DRAIN CURRENT (A)

Figure 4. On−Resistance versus Drain

Current and Gate Voltage

VGS = 10 V

0.25

0.50

0.75

1.00

1.25

1.50

1.75

2.00

2.25

2.50

2.75

−50

−25

0

25

50

75

100

125

150

ID = 3.6 A

VGS = 10 V

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

0.90

0.95

1.00

1.05

1.10

1.15

−50

−25

0

25

50

75

100

125

150

TJ, JUNCTION TEMPERATURE (°C)

Figure 6. BVDSS Variation with Temperature

ID = 1 mA

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