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UPA803T Datasheet(PDF) 1 Page - NEC

Part No. UPA803T
Description  NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD
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Maker  NEC [NEC]
Homepage  http://www.nec.com/
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UPA803T Datasheet(HTML) 1 Page - NEC

   
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SILICON TRANSISTOR
µPA803T has built-in 2 transistors which were developed for UHF.
FEATURES
High fT
fT = 5.5 GHz TYP. (@VCE = 5 V, IC = 5 mA, f = 1 GHz)
Small Collector Capacitance
Cob = 0.7 pF TYP. (@VCB = 5 V, IE = 0, f = 1 MHz)
A Surface Mounting Package Adopted
Built-in 2 Transistors (2
× 2SC4570)
ORDERING INFORMATION
PART NUMBER
QUANTITY
PACKING STYLE
µPA803T
Loose products
Embossed tape 8 mm wide. Pin 6 (Q1
(50 PCS)
Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
µPA803T-T1
Taping products
(3 KPCS/Reel)
Remark
If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
12
V
Emitter to Base Voltage
VEBO
3V
Collector Current
IC
30
mA
Total Power Dissipation
PT
120 in 1 element
mW
160 in 2 elementsNote
Junction Temperature
Tj
125
˚C
Storage Temperature
Tstg
–55 to +125
˚C
Note
90 mW must not be exceeded in 1 element.
µPA803T
PIN CONFIGURATION (Top View)
Printed in Japan
Document No. ID-3637
(O.D. No. ID-9144)
Date Published April 1995 P
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) MINI MOLD
©
1995
PRELIMINARY DATA SHEET
The information in this document is subject to change without notice.
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.1
1.25±0.1
65
4
Q1
Q2
12
3
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Emitter (Q2)
5. Base (Q2)
6. Base (Q1)


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