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UPA802T Datasheet(PDF) 1 Page - NEC

Part No. UPA802T
Description  HIGH-FREQUENCY LOW NOISE AMPLIFIER NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD
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Maker  NEC [NEC]
Homepage  http://www.nec.com/
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UPA802T Datasheet(HTML) 1 Page - NEC

   
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SILICON TRANSISTOR
The
µPA802T has built-in 2 low-voltage transistors which are designed
to amplify low noise in the VHF band to the UHF band.
FEATURES
Low Noise
NF = 1.4 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
High Gain
|S21e|2 = 12 dB TYP. @ f = 1 GHz, VCE = 3 V, IC = 7 mA
A Mini Mold Package Adopted
Built-in 2 Transistors (2
× 2SC4227)
ORDERING INFORMATION
PART NUMBER
QUANTITY
PACKING STYLE
µPA802T
Loose products
Embossed tape 8 mm wide. Pin 6 (Q1
(50 PCS)
Base), Pin 5 (Q2 Base), Pin 4 (Q2 Emitter)
face to perforation side of the tape.
µPA802T-T1
Taping products
(3 KPCS/Reel)
Remark
If you require an evaluation sample, please contact an NEC
Sales Representative. (Unit sample quantity is 50 pcs.)
ABSOLUTE MAXIMUM RATINGS (TA = 25
°C)
PARAMETER
SYMBOL
RATING
UNIT
Collector to Base Voltage
VCBO
20
V
Collector to Emitter Voltage
VCEO
10
V
Emitter to Base Voltage
VEBO
1.5
V
Collector Current
IC
65
mA
Total Power Dissipation
PT
150 in 1 element
mW
200 in 2 elementsNote
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg
–65 to +150
˚C
Note
110 mW must not be exceeded in 1 element.
µPA802T
HIGH-FREQUENCY LOW NOISE AMPLIFIER
NPN SILICON EPITAXIAL TRANSISTOR
(WITH BUILT-IN 2 ELEMENTS) MINI MOLD
PIN CONFIGURATION (Top View)
©
1995
PRELIMINARY DATA SHEET
Printed in Japan
Document No. ID-3636
(O.D. No. ID-9143)
Date Published April 1995 P
The information in this document is subject to change without notice.
PACKAGE DRAWINGS
(Unit: mm)
2.1±0.1
1.25±0.1
65
4
Q1
Q2
12
3
PIN CONNECTIONS
1. Collector (Q1)
2. Emitter (Q1)
3. Collector (Q2)
4. Emitter (Q2)
5. Base (Q2)
6. Base (Q1)


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