RSS125N03

Transistors

2/3

Electrical characteristics (Ta=25

°C)

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

Gate-source leakage

Drain-source breakdown voltage

Zero gate voltage drain current

Gate threshold voltage

Static drain-source on-state

resistance

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Total gate charge

−−

±10

=15V

30

−−

−−

1

1.0

−

2.5

V

−

6.5

8.9

−

8.6

11.8

m

−

9.3

12.8

10

−−

−

1670

−

pF

=10V

−

470

270

−

pF

=0V

−

10

−

pF

f

=1MHz

=10V

=2.40Ω

=10Ω

−

17

−

ns

−

69

−

ns

−

30

−

ns

−

20

−

ns

−

4.2

28

nC

−

8.0

−

nC

=5V

−−

nC

=12.5A

∗Pulsed

∗

∗

∗

∗

∗

∗

∗

∗

∗

Body diode characteristics (Source-Drain Characteristics) (Ta=25

°C)

Forward voltage

−−

1.2

V

Parameter

Symbol

Min.

Typ.

Max.

Unit

Conditions

∗Pulsed

∗