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J112-TR1 Datasheet(PDF) 1 Page - Vishay Siliconix |
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J112-TR1 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 6 page J/SST111 Series Vishay Siliconix Document Number: 70232 S-04028—Rev. E, 04-Jun-01 www.vishay.com 7-1 N-Channel JFETs J111 SST111 J112 SST112 J113 SST113 PRODUCT SUMMARY Part Number VGS(off) (V) rDS(on) Max ( W) ID(off) Typ (pA) tON Typ (ns) J/SST111 –3 to –10 30 5 4 J/SST112 –1 to –5 50 5 4 J/SST113 v–3 100 5 4 FEATURES BENEFITS APPLICATIONS D Low On-Resistance: 111 < 30 W D Fast Switching—tON: 4 ns D Low Leakage: 5 pA D Low Capacitance: 3 pF D Low Insertion Loss D Low Error Voltage D High-Speed Analog Circuit Performance D Negligible “Off-Error,” Excellent Accuracy D Good Frequency Response, Low Glitches D Eliminates Additional Buffering D Analog Switches D Choppers D Sample-and-Hold D Normally “On” Switches D Current Limiters DESCRIPTION The J/SST111 series consists of all-purpose analog switches designed to support a wide range of applications. The J/SST113 are useful in a high-gain amplifier mode. The J series, TO-226AA (TO-92) plastic package, provides low cost, while the SST series, TO236 (SOT-23) package, provides surface-mount capability. Both the J and SST series are available in tape-and-reel for automated assembly (see Packaging Information). For similar products in TO-206AA(TO-18) packaging, see the 2N/PN/SST4391 series, 2N4856A/4857A/4858A, and 2N5564/5565/5566 (duals) data sheets. TO-226AA (TO-92) Top View J111 J112 J113 D G S 1 2 3 D S G TO-236 (SOT-23) 2 3 1 Top View SST111 (C1)* SST112 (C2)* SST113 (C3)* *Marking Code for TO-236 ABSOLUTE MAXIMUM RATINGS Gate-Drain, Gate-Source Voltage –35 V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Gate Current 50 mA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Lead Temperature (1/16” from case for 10 seconds) 300 _C . . . . . . . . . . . . . . Storage Temperature –55 to 150 _C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Operating Junction Temperature –55 to 150 _C . . . . . . . . . . . . . . . . . . . . . . . . . . Power Dissipationa (TO-236) 350 mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . (TO-226AA) 360 mW . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Notes a. Derate 2.8 mW/ _C above 25_C For applications information see AN105. |
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