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ACS05MS Datasheet(PDF) 2 Page - Intersil Corporation

Part No. ACS05MS
Description  Radiation Hardened Hex Inverter with Open Drain Outputs
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Manufacturer  INTERSIL [Intersil Corporation]
Direct Link  http://www.intersil.com/cda/home
Logo INTERSIL - Intersil Corporation

ACS05MS Datasheet(HTML) 2 Page - Intersil Corporation

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All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil semiconductor products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time with-
out notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and
reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result
from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries.
For information regarding Intersil Corporation and its products, see web site www.intersil.com
Sales Office Headquarters
NORTH AMERICA
Intersil Corporation
P. O. Box 883, Mail Stop 53-204
Melbourne, FL 32902
TEL: (321) 724-7000
FAX: (321) 724-7240
EUROPE
Intersil SA
Mercure Center
100, Rue de la Fusee
1130 Brussels, Belgium
TEL: (32) 2.724.2111
FAX: (32) 2.724.22.05
ASIA
Intersil (Taiwan) Ltd.
7F-6, No. 101 Fu Hsing North Road
Taipei, Taiwan
Republic of China
TEL: (886) 2 2716 9310
FAX: (886) 2 2715 3029
Die Characteristics
DIE DIMENSIONS:
Size: 2390
µm x 2390µm (94 mils x 94 mils)
Thickness: 525
µm ±25µm (20.6 mils ±1 mil)
Bond Pad: 110
µm x 110µm (4.3 x 4.3 mils)
METALLIZATION:
Metal 1 Thickness: 0.7
µm ±0.1µm
Metal 2 Thickness: 1.0
µm ±0.1µm
SUBSTRATE POTENTIAL
Unbiased Insulator
PASSIVATION:
Type: Phosphorous Silicon Glass (PSG)
Thickness: 1.30
µm ±0.15µm
SPECIAL INSTRUCTIONS:
Bond VCC First
ADDITIONAL INFORMATION:
Worst Case Current Density: <2.0 x 105 A/cm2
Transistor Count: 46
Metallization Mask Layout
ACS05MS
Y1
A1
VCC
A6
A2 (3)
Y2 (4)
NC
A3 (5)
(12) Y6
(11) A5
NC
(10) Y5
(6)
(7)
(8)
(9)
A4
Y4
GND
Y3
(2)
(1)
(14)
(13)
ACS05MS


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