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FX50SMJ-06 Datasheet(PDF) 2 Page - Mitsubishi Electric Semiconductor |
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FX50SMJ-06 Datasheet(HTML) 2 Page - Mitsubishi Electric Semiconductor |
2 / 4 page PRELIMINARY Notice: This is not a final specification. Some parametric limits are subject to change. Jan.1999 V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr V µA mA V m Ω m Ω V S pF pF pF ns ns ns ns V °C/W ns –60 — — –1.3 — — — — — — — — — — — — — — — — — –1.8 15.0 23 –0.38 49.1 11610 1355 687 73 137 822 320 –1.0 — 70 — ±0.1 –0.1 –2.3 18.9 32 –0.47 — — — — — — — — –1.5 0.83 — ELECTRICAL CHARACTERISTICS (Tch = 25°C) Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time Symbol Unit Parameter Test conditions Limits Min. Typ. Max. ID = –1mA, VGS = 0V VGS = ±20V, VDS = 0V VDS = –60V, VGS = 0V ID = –1mA, VDS = –10V ID = –25A, VGS = –10V ID = –25A, VGS = –4V ID = –25A, VGS = –10V ID = –25A, VDS = –10V VDS = –10V, VGS = 0V, f = 1MHz VDD = –30V, ID = –25A, VGS = –10V, RGEN = RGS = 50 Ω IS = –25A, VGS = 0V Channel to case IS = –50A, dis/dt = 100A/ µs PERFORMANCE CURVES 0 50 100 150 200 250 0 200 50 100 150 0 –20 – 40 – 60 – 80 – 100 0 – 1.0 – 2.0 – 3.0 – 4.0 – 5.0 PD = 150W VGS = –10V Tc = 25°C Pulse Test –6V –3V –4V –5V –8V 0 – 10 –20 –30 –40 –50 0 –0.4 –0.8 –1.2 –1.6 –2.0 –6V –5V –4V –3V –8V –10V VGS = Tc = 25°C Pulse Test –100 –3 –5 –7 –101 –2 –3 –5 –7 –100 –2 –101 –3 –5 –7 –2 –102 –3 –5 –7 –2 –3 –102 –2 –3 –5 –7 –2 –3 –5 –7 –2 tw = TC = 25°C Single Pulse 100 µs 10ms 1ms DC 10 µs POWER DISSIPATION DERATING CURVE CASE TEMPERATURE TC (°C) MAXIMUM SAFE OPERATING AREA DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN-SOURCE VOLTAGE VDS (V) OUTPUT CHARACTERISTICS (TYPICAL) DRAIN-SOURCE VOLTAGE VDS (V) MITSUBISHI Pch POWER MOSFET FX50SMJ-06 HIGH-SPEED SWITCHING USE |
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