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BC337 Datasheet(PDF) 5 Page - NXP Semiconductors

Part # BC337
Description  45 V, 500 mA NPN general-purpose transistors
Download  19 Pages
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Manufacturer  PHILIPS [NXP Semiconductors]
Direct Link  http://www.nxp.com
Logo PHILIPS - NXP Semiconductors

BC337 Datasheet(HTML) 5 Page - NXP Semiconductors

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BC817_BC817W_BC337_6
© NXP B.V. 2009. All rights reserved.
Product data sheet
Rev. 06 — 17 November 2009
5 of 19
NXP Semiconductors
BC817; BC817W; BC337
45 V, 500 mA NPN general-purpose transistors
7.
Characteristics
[1]
Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
[2]
VBE decreases by approximately 2 mV/K with increasing temperature.
Table 8.
Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
ICBO
collector-base cut-off current
IE = 0 A; VCB = 20 V
-
-
100
nA
IE = 0 A; VCB = 20 V;
Tj =150 °C
--5
μA
IEBO
emitter-base cut-off current
IC = 0 A; VEB = 5 V
-
-
100
nA
hFE
DC current gain
IC = 100 mA; VCE = 1 V
[1]
BC817; BC817W; BC337
100
-
600
BC817-16; BC817-16W;
BC337-16
100
-
250
BC817-25; BC817-25W;
BC337-25
160
-
400
BC817-40; BC817-40W;
BC337-40
250
-
600
hFE
DC current gain
IC = 500 mA; VCE = 1 V
[1] 40
-
-
VCEsat
collector-emitter saturation
voltage
IC = 500 mA; IB = 50 mA
[1] --700
mV
VBE
base-emitter voltage
IC = 500 mA; VCE = 1 V
[2] --1.2
V
Cc
collector capacitance
IE = ie = 0 A; VCB = 10 V;
f=1MHz
-3
-
pF
fT
transition frequency
IC = 10 mA; VCE = 5 V;
f=100MHz
100
-
-
MHz


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