Vishay Siliconix

Si5903DC

Document Number: 71054

S10-0547-Rev. C, 08-Mar-10

www.vishay.com

1

Dual P-Channel 2.5 V (G-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Definition

•

•

Compliant to RoHS Directive 2002/95/EC

PRODUCT SUMMARY

- 20

± 2.9

± 2.7

± 2.2

Bottom View

1

Marking Code

DA

XX

Lot Traceability

and Date Code

Part # Code

Ordering Information: Si5903DC-T1-E3 (Lead (Pb)-free)

Si5903DC-T1-GE3 (Lead (Pb)-free and Halogen-free)

P-Channel MOSFET

P-Channel MOSFET

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. See reliability manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result

of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure

adequate bottom side solder interconnection.

c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components.

Parameter

Symbol

5 s

Steady State

Unit

Drain-Source Voltage

- 20

V

Gate-Source Voltage

± 12

a

± 2.9

± 2.1

A

± 2.1

± 1.5

Pulsed Drain Current

± 10

- 1.8

- 0.9

2.1

1.1

W

1.1

0.6

Operating Junction and Storage Temperature Range

- 55 to 150

°C

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

t

≤ 5 s

50

60

°C/W

Steady State

90

110

Maximum Junction-to-Foot (Drain)

Steady State

30

40