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SI5903DC-T1-E3 Datasheet(PDF) 1 Page - Vishay Siliconix |
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SI5903DC-T1-E3 Datasheet(HTML) 1 Page - Vishay Siliconix |
1 / 9 page Vishay Siliconix Si5903DC Document Number: 71054 S10-0547-Rev. C, 08-Mar-10 www.vishay.com 1 Dual P-Channel 2.5 V (G-S) MOSFET FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFETs • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY VDS (V) RDS(on) (Ω)ID (A) - 20 0.155 at VGS = - 4.5 V ± 2.9 0.180 at VGS = - 3.6 V ± 2.7 0.260 at VGS = - 2.5 V ± 2.2 Bottom View 1206-8 ChipFET® S1 G1 S2 G2 D1 D1 D2 D2 1 Marking Code DA XX Lot Traceability and Date Code Part # Code Ordering Information: Si5903DC-T1-E3 (Lead (Pb)-free) Si5903DC-T1-GE3 (Lead (Pb)-free and Halogen-free) S1 G1 D1 P-Channel MOSFET S2 G2 D2 P-Channel MOSFET Notes: a. Surface mounted on 1" x 1" FR4 board. b. See reliability manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. c. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol 5 s Steady State Unit Drain-Source Voltage VDS - 20 V Gate-Source Voltage VGS ± 12 Continuous Drain Current (TJ = 150 °C) a TA = 25 °C ID ± 2.9 ± 2.1 A TA = 85 °C ± 2.1 ± 1.5 Pulsed Drain Current IDM ± 10 Continuous Source Current (Diode Conduction)a IS - 1.8 - 0.9 Maximum Power Dissipationa TA = 25 °C PD 2.1 1.1 W TA = 85 °C 1.1 0.6 Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature)b, c 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta t ≤ 5 s RthJA 50 60 °C/W Steady State 90 110 Maximum Junction-to-Foot (Drain) Steady State RthJF 30 40 |
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