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PSMN1R2-30YLC Datasheet(PDF) 3 Page - NXP Semiconductors |
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PSMN1R2-30YLC Datasheet(HTML) 3 Page - NXP Semiconductors |
3 / 8 page 3 NextPower MOSFETs - Visit us at www.nxp.com/mosfets NextPower 25 V & 30 V MOSFETs in LFPAK (Power-SO8) Benefits of Superjunction technology Many suppliers focus on two favourable indicators when defining MOSFET performance, but this only tells part of the story. The spider chart below shows the relative performance of NextPower versus the leading MOSFET vendors, comparing the six most important MOSFET parameters required for high-performance & high reliability switching applications. The outside edge of the graph represents the ‘best-in-class’ performance, whilst scoring towards the centre of the graph represents a weakness. } Low R DS(on) gives low I 2 R losses and superior performance when used in a SYNC FET or power OR-ing application } Low Q oss gives reduced losses between the drain & source terminals since the energy stored in the output capacitance (C oss) is wasted whenever the voltage changes across the output terminals } SOA performance provides tolerance to overload & fault conditions. The graph shows the maximum allowable current for a 1 mS pulse at V DS=10 V } Low Miller charge (Q GD) gives reduced switching losses between the MOSFET’s drain & source terminals when the MOSFET turns ON or turns OFF } Low gate charge (Q G) gives reduced losses in the gate drive circuit since less energy is required to turn the MOSFET ON & OFF } Superior junction temperature rating, T j(max), is proof that LFPAK is the most rugged Power-SO8 package available. LFPAK is the best choice for demanding environments and where high reliability is required Comparison of NextPower technology with key competitor types RDS(on)max @ Vgs = 4.5 V T j(max) NXP Competitor A Competitor B Combined Q G & Q GD FOM SOA rating Q oss FOM |
Similar Part No. - PSMN1R2-30YLC |
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Similar Description - PSMN1R2-30YLC |
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