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November 1995

COPYRIGHT

INTEL CORPORATION 1995

Order Number 290429-005

28F008SA

Extended Temperature Specifications Included

Y

High-Density Symmetrically-Blocked

Architecture

Sixteen 64-Kbyte Blocks

Y

Extended Cycling Capability

100000 Block Erase Cycles

16 Million Block Erase

Cycles per Chip

Y

Automated Byte Write and Block Erase

Command User Interface

Status Register

Y

System Performance Enhancements

RYBY

Status Output

Erase Suspend Capability

Y

Deep Power-Down Mode

Y

Very High-Performance Read

85 ns Maximum Access Time

Y

SRAM-Compatible Write Interface

Y

Hardware Data Protection Feature

EraseWrite Lockout during Power

Transitions

Y

Industry Standard Packaging

40-Lead TSOP 44-Lead PSOP

Y

ETOX III Nonvolatile Flash Technology

12V Byte WriteBlock Erase

id-state storage The 28F008SA’s extended cycling symmetrically blocked architecture fast access time

write automation and low power consumption provide a more reliable lower power lighter weight and higher

performance alternative to traditional rotating disk technology The 28F008SA brings new capabilities to porta-

ble computing Application and operating system software stored in resident flash memory arrays provide

instant-on rapid execute-in-place and protection from obsolescence through in-system software updates

Resident software also extends system battery life and increases reliability by reducing disk drive accesses

For high density data acquisition applications the 28F008SA offers a more cost-effective and reliable alterna-

tive to SRAM and battery Traditional high density embedded applications such as telecommunications can

take advantage of the 28F008SA’s nonvolatility blocking and minimal system code requirements for flexible

firmware and modular software designs

The 28F008SA is offered in 40-lead TSOP (standard and reverse) and 44-lead PSOP packages Pin assign-

ments simplify board layout when integrating multiple devices in a flash memory array or subsystem This

device uses an integrated Command User Interface and state machine for simplified block erasure and byte

write The 28F008SA memory map consists of 16 separately erasable 64-Kbyte blocks

Intel’s 28F008SA employs advanced CMOS circuitry for systems requiring low power consumption and noise

immunity Its 85 ns access time provides superior performance when compared with magnetic storage media

handheld instrumentation and other low-power applications The RP

power control input also provides

absolute data protection during system powerupdown

Manufactured on Intel’s 08 micron ETOX process the 28F008SA provides the highest levels of quality

reliability and cost-effectiveness