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28F016XS Datasheet(PDF) 45 Page - Intel Corporation

Part # 28F016XS
Description  16-MBIT (1 MBIT x 16, 2 MBIT x 8) SYNCHRONOUS FLASH MEMORY
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Manufacturer  INTEL [Intel Corporation]
Direct Link  http://www.intel.com
Logo INTEL - Intel Corporation

28F016XS Datasheet(HTML) 45 Page - Intel Corporation

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28F016XS FLASH MEMORY
45
4/15/97 9:41 AM
9053204.DOC
INTEL CONFIDENTIAL
(until publication date)
5.9
AC Characteristics for CEX#—Controlled Write Operations(1) (Continued)
VCC = 5.0V ± 5%, TA = 0°C to +70°C
Versions
28F016XS-15
28F016XS-20
Symbol
Parameter
Notes
Min
Typ
Max
Min
Typ
Max
Unit
tAVAV
Write Cycle Time
60
60
ns
tVPEH1,2
VPP Setup to CEX# Going
High
3,7
100
100
ns
tPHWL
RP# Setup to WE# Going
Low
3
300
300
ns
tWLEL
WE# Setup to CEX# Going
Low
3,7
0
0
ns
tAVEH
Address Setup to CEX#
Going High
2,6,7
45
45
ns
tDVEH
Data Setup to CEX# Going
High
2,6,7
45
45
ns
tELEH
CEX# Pulse Width
7
50
50
ns
tEHDX
Data Hold from CEX# High
2,7
0
0
ns
tEHAX
Address Hold from CEX#
High
2,7
5
5
ns
tEHWH
WE hold from CEX# High
3,7
5
5
ns
tEHEL
CEX# Pulse Width High
7
15
15
ns
tGHEL
Read Recovery before
Write
30
0
ns
tEHRL
CEX# High to RY/BY#
Going Low
3,7
100
100
ns
tRHPL
RP# Hold from Valid Status
Register (CSR, GSR, BSR)
Data and RY/BY# High
30
0
ns
tPHEL
RP# High Recovery to
CEX# Going Low
3,7
300
300
ns
tEHCH
Write Recovery before
Read
20
20
ns
tQVVL1,2
VPP Hold from Valid Status
Register (CSR, GSR, BSR)
Data and RY/BY# High
30
0
µs
tEHQV1
Duration of Program
Operation
3,4,5,8
4.5
6
TBD
4.5
6
TBD
µs
tEHQV2
Duration of Block Erase
Operation
3,4
0.6
1.2
20
0.6
1.2
20
sec


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