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PBSS4032PZ Datasheet(PDF) 4 Page - NXP Semiconductors |
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PBSS4032PZ Datasheet(HTML) 4 Page - NXP Semiconductors |
4 / 15 page PBSS4032PZ_1 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2010. All rights reserved. Product data sheet Rev. 01 — 31 March 2010 4 of 15 NXP Semiconductors PBSS4032PZ 30 V, 4.4 A PNP low VCEsat (BISS) transistor 6. Thermal characteristics [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 6 cm2. [3] Device mounted on a ceramic PCB, Al2O3, standard footprint. Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air [1] -- 180 K/W [2] -- 75 K/W [3] -- 65 K/W Rth(j-sp) thermal resistance from junction to solder point -- 15 K/W FR4 PCB, standard footprint Fig 2. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values 006aac153 10 1 102 103 Zth(j-a) (K/W) 10−1 10−5 10 10−2 10−4 102 10−1 tp (s) 10−3 103 1 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01 0 |
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