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SB1H90-E3 Datasheet(PDF) 2 Page - Vishay Siliconix |
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SB1H90-E3 Datasheet(HTML) 2 Page - Vishay Siliconix |
2 / 4 page SB1H90, SB1H100 www.vishay.com Vishay General Semiconductor Revision: 13-Aug-13 2 Document Number: 88716 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Notes (1) Pulse test: 300 ms pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms Note (1) PCB mounted with 0.2" x 0.2" (5.0 mm x 5.0 mm) copper pad areas RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) Fig. 1 - Forward Current Derating Curve Fig. 2 - Typical Instantaneous Forward Characteristics ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS SYMBOL SB1H90 SB1H100 UNIT Maximum instantaneous forward voltage IF = 1.0 A TJ = 25 °C VF (1) 0.77 V TJ = 125 °C 0.62 IF = 2.0 A TJ = 25 °C 0.86 TJ = 125 °C 0.70 Maximum reverse current at rated VR TJ = 25 °C IR (2) 1.0 μA TJ = 125 °C 0.5 mA THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL SB1H90 SB1H100 UNIT Maximum thermal resistance RJA (1) 57 °C/W RJL (1) 15 ORDERING INFORMATION (Example) PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE SB1H100-E3/54 0.34 54 5500 13" diameter paper tape and reel SB1H100-E3/73 0.34 73 3000 Ammo pack packaging 0 0 0.6 0.8 1.0 50 25 75 100 125 150 175 Case Temperature (°C) 0.4 0.2 1.2 200 0.2 0 0.4 0.8 1.0 0.01 0.1 10 1 1.2 0.6 1.4 1.6 1.8 100 Instantaneous Forward Voltage (V) T J = 150 °C T J = 125 °C T J = 25 °C T J = 100 °C T J = 175 °C |
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