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IDT7MB4045S15M Datasheet(PDF) 6 Page - Integrated Device Technology

Part # IDT7MB4045S15M
Description  256K x 32 CMOS STATIC RAM MODULE
Download  8 Pages
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Manufacturer  IDT [Integrated Device Technology]
Direct Link  http://www.idt.com
Logo IDT - Integrated Device Technology

IDT7MB4045S15M Datasheet(HTML) 6 Page - Integrated Device Technology

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IDT7MP4045/7MP4145
256K x 32 CMOS STATIC RAM MODULE
COMMERCIAL TEMPERATURE RANGE
15.2
6
CS
2703 drw 10
tAW
tAS
tWR
tDW
DATA IN
ADDRESS
tWC
WE
tWP
tDH
DATA OUT
tWHZ
(6)
(4)
(4)
(7)
tOW
OE
(6)
tOHZ
tOHZ
(6)
DATA VALID
(6)
TIMING WAVEFORM OF WRITE CYCLE NO. 1 (
WE
WE CONTROLLED) (1, 2, 3, 7)
CS
2703 drw 11
tAW
tAS
tWR
tDW
DATAIN
ADDRESS
tWC
WE
tCW
tDH
DATA VALID
TIMING WAVEFORM OF WRITE CYCLE NO. 2 (
CS
CS CONTROLLED) (1, 2, 3, 5)
NOTES:
1.
WE or CS must be HIGH during all address transitions.
2. A write occurs during the overlap (tWP) of a LOW
CS and a LOW WE.
3. tWR is measured from the earlier of
CS or WE going HIGH to the end of write cycle.
4. During this period, I/O pins are in the output state, and input signals must not be applied.
5. If the
CS LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in a high-impedance state.
6. Transition is measured
±200mV from steady state with a 5pF load (including scope and jig). This parameter is guaranteed by design, but not tested.
7. If
OE is LOW during a WE controlled write cycle, the write pulse width must be the larger of tWP or (tWHZ + tDW) to allow the I/O drivers to turn off and data
to be placed on the bus for the required tDW. If
OE is HIGH during a WE controlled write cycle, this requirement does not apply and the write pulse can
be as short as the specified tWP.


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