IDT7MP4120S25Z datasheet(4/8 Pages) IDT

Part #	IDT7MP4120S25Z

Description	1M x 32 CMOS STATIC RAM MODULE

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Manufacturer	IDT [Integrated Device Technology]

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IDT7MP4120

1M x 32 CMOS STATIC RAM MODULE

COMMERCIAL TEMPERATURE RANGE

7.07

4

AC ELECTRICAL CHARACTERISTICS

(VCC = 5V

±10%, TA = 0°C to +70°C)

7MP4120SxxZ/M

–20

–25

Symbol

Parameter

Min.

Max.

Min.

Max.

Unit

Read Cycle

tRC

Read Cycle Time

20

—

25

—

ns

tAA

Address Access Time

—

20

—

25

ns

tACS

Chip Select Access Time

—

20

—

25

ns

tCLZ

(1)

Chip Select to Output in Low-Z

3

—

3

—

ns

tOE

Output Enable to Output Valid

—

12

—

15

ns

tOLZ

(1)

Output Enable to Output in Low-Z

0

—

0

—

ns

tCHZ

(1)

Chip Deselect to Output in High-Z

—

10

—

12

ns

tOHZ

(1)

Output Disable to Output in High-Z

—

10

—

12

ns

tOH

Output Hold from Address Change

3

—

3

—

ns

tPU

(1)

Chip Select to Power-Up Time

0

—

0

—

ns

tPD

(1)

Chip Deselect to Power-Down Time

—

20

—

25

ns

Write Cycle

tWC

Write Cycle Time

20

—

25

—

ns

tCW

Chip Select to End-of-Write

17

—

20

—

ns

tAW

Address Valid to End-of-Write

17

—

20

—

ns

tAS

Address Set-up Time

0

—

0

—

ns

tWP

Write Pulse Width

15

—

20

—

ns

tWR

Write Recovery Time

3

—

3

—

ns

tWHZ

(1)

Write Enable to Output in High-Z

—

10

—

15

ns

tDW

Data to Write Time Overlap

12

—

15

—

ns

tDH

Data Hold from Write Time

0

—

0

—

ns

tOW

(1)

Output Active from End-of-Write

0

—

0

—

ns

NOTE:

3019 tbl 10

1. This parameter is guaranteed by design, but not tested.

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