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IDT7M1002S30G Datasheet(PDF) 7 Page - Integrated Device Technology

Part # IDT7M1002S30G
Description  16K x 32 CMOS DUAL-PORT STATIC RAM MODULE
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Manufacturer  IDT [Integrated Device Technology]
Direct Link  http://www.idt.com
Logo IDT - Integrated Device Technology

IDT7M1002S30G Datasheet(HTML) 7 Page - Integrated Device Technology

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IDT7M1002
16K x 32 CMOS DUAL-PORT STATIC RAM MODULE
MILITARY AND COMMERCIAL TEMPERATURE RANGES
7.02
7
TIMING WAVEFORM OF WRITE CYCLE NO. 2 (
CS
CS
CS
CS
CS CONTROLLED TIMING)(1, 2, 4)
2795 drw 07
DATAOUT
tAW
tDW
DATAIN
CS
OE
ADDRESS
tWC
tDH
tCHZ
tAS (6)
tWP (2)
tWR (7)
tWHZ (9)
OW
t
(9)
(4)
(4)
DATA VALID
R/
W
(9)
2795 drw 08
tAW
tDW
DATAIN
R/
W
CS
ADDRESS
tWC
tDH
tAS (6)
tWP (2)
tWR (7)
DATA VALID
NOTES:
1. R/
W must be HIGH during all address transitions.
2. A write occurs during the overlap (tWP) of a LOW
CS and a LOW R/W.
3. tWR is measured from the earlier of
CS or R/W (or SEM or R/W) going HIGH to the end of write cycle.
4. During this period, the I/O pins are in the output state and input signals must be applied.
5. If the
CS or SEM low transition occurs simultaneously with or after the R/W low transition, the outputs remain in the high impedance state.
6. Timing depends on which enable signal is asserted last.
7. Timing depends on which enable signal is de-asserted first.
8. If
OE is LOW during a R/W controlled write cycle, the write pulse width must be the larger of tWP or (tWZ + tDW) to allow the I/O drivers to
turn off and data to be placed on the bus for the required tDW. If
OE is HIGH during an R/W controlled write cycle, this requirement does
not apply and the write pulse can be as short as the specified tWP.
TIMING WAVEFORM OF WRITE CYCLE NO. 1 (R/
W
W
W
W
W CONTROLLED TIMING)(1, 2, 4)


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