IDT54/74FCT827AT/BT/CT/DT, IDT54/74FCT2827AT/BT/CT

HIGH-PERFORMANCE CMOS BUFFERS

MILITARY AND COMMERCIAL TEMPERATURE RANGES

6.22

3

DC ELECTRICAL CHARACTERISTICS OVER OPERATING RANGE

Following Conditions Apply Unless Otherwise Specified:

Symbol

Parameter

Min.

Max.

Unit

Input HIGH Level

Guaranteed Logic HIGH Level

2.0

—

—

V

Input LOW Level

Guaranteed Logic LOW Level

—

—

0.8

V

—

—

±1

µA

—

—

±1

High Impedance Output Current

—

—

±1

µA

—

—

±1

—

—

±1

µA

Clamp Diode Voltage

—

–0.7

–1.2

V

Input Hysteresis

—

—

200

—

mV

Quiescent Power Supply Current

—

0.01

1

mA

2573 lnk 05

OUTPUT DRIVE CHARACTERISTICS FOR FCT2827T

2573 lnk 07

Symbol

Parameter

Min.

Max.

Unit

Output LOW Current

16

48

—

mA

Output HIGH Current

–16

–48

—

mA

Output HIGH Voltage

2.4

3.3

—

V

Output LOW Voltage

—

0.3

0.50

V

2573 lnk 06

Symbol

Parameter

Min.

Max.

Unit

Output HIGH Voltage

2.4

3.3

—

V

2.0

3.0

—

V

Output LOW Voltage

—

0.3

0.5

V

Short Circuit Current

–60

–120

–225

mA

OUTPUT DRIVE CHARACTERISTICS FOR FCT827T

NOTES:

1. For conditions shown as Max. or Min., use appropriate value specified under Electrical Characteristics for the applicable device type.

2. Typical values are at Vcc = 5.0V, +25

°C ambient.

3. Not more than one output should be shorted at one time. Duration of the short circuit test should not exceed one second.

4. The test limit for this parameter is