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IDT6198S70YB Datasheet(PDF) 2 Page - Integrated Device Technology |
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IDT6198S70YB Datasheet(HTML) 2 Page - Integrated Device Technology |
2 / 8 page 6.3 2 IDT6198S/L CMOS STATIC RAM 64K (16K x 4-BIT) MILITARY AND COMMERCIAL TEMPERATURE RANGES PIN CONFIGURATIONS DIP/SOJ TOP VIEW 5 6 7 8 9 10 11 L28-2 26 25 24 23 13 14 15 16 17 32 1 28 27 INDEX A5 A6 A13 A12 CS 12 22 21 A3 A4 2987 drw 03 A7 A8 20 19 18 A11 4 A2 A1 NC A10 A9 I/O3 I/O2 I/O1 LCC TOP VIEW PIN DESCRIPTIONS Name Description A0–A13 Address Inputs CS Chip Select WE Write Enable OE Output Enable I/O0–I/O3 Data Input/Output VCC Power GND Ground 2987 tbl 01 ABSOLUTE MAXIMUM RATINGS (1) Symbol Rating Com’l. Mil. Unit VTERM Terminal Voltage –0.5 to +7.0 –0.5 to +7.0 V with Respect to GND TA Operating 0 to +70 –55 to +125 °C Temperature TBIAS Temperature –55 to +125 –65 to +135 °C Under Bias TSTG Storage –55 to +125 –65 to +150 °C Temperature PT Power Dissipation 1.0 1.0 W IOUT DC Output 50 50 mA Current NOTE: 2987 tbl 03 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. CAPACITANCE (TA = +25 °C, f = 1.0MHz) Symbol Parameter (1) Conditions Max. Unit CIN Input Capacitance VIN = 0V 7 pF CI/O I/O Capacitance VOUT = 0V 7 pF NOTE: 2987 tbl 04 1. This parameter is determined by device characterization, but is not production tested. TRUTH TABLE (1) Mode CS CS WE WE OE OE I/O Power Standby H X X High-Z Standby Read L H L DATAOUT Active Write L L X DATAIN Active Read L H H High-Z Active NOTE: 2987 tbl 02 1. H = VIH, L = VIL, X = Don't Care 2987 drw 02 5 6 7 8 9 10 11 12 1 2 3 4 24 23 22 21 20 19 18 17 D24-1 & SO24-4 A0 A1 A2 A3 A4 A5 A6 A7 VCC A13 A11 A10 I/O 3 16 15 GND I/O 2 I/O 1 I/O 0 CS 14 13 A12 NC WE A8 A9 OE |
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