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©2010 Fairchild Semiconductor Corporation

FDMS0312AS Rev.C1

Off Characteristics

On Characteristics

Dynamic Characteristics

Switching Characteristics

Drain-Source Diode Characteristics

Symbol

Parameter

Test Conditions

Min

Typ

Max

Units

Drain to Source Breakdown Voltage

V

ΔBV

DSS

ΔT

J

Breakdown Voltage Temperature

Coefficient

18

mV/°C

Zero Gate Voltage Drain Current

μA

Gate to Source Leakage Current, Forward

100

nA

Gate to Source Threshold Voltage

1.2

1.5

3.0

V

ΔV

GS(th)

ΔT

J

Gate to Source Threshold Voltage

Temperature Coefficient

-4

mV/°C

Static Drain to Source On Resistance

4.2

5.0

m

Ω

6.2

5.3

6.8

Forward Transconductance

S

Input Capacitance

f = 1MHz

1365

1815

pF

Output Capacitance

550

730

pF

Reverse Transfer Capacitance

70

105

pF

Gate Resistance

0.5

2.5

Ω

Turn-On Delay Time

10

19

ns

Rise Time

2.3

10

ns

Turn-Off Delay Time

25

40

ns

Fall Time

612

ns

Total Gate Charge

23

31

nC

Total Gate Charge

16

nC

Gate to Source Charge

3.3

nC

Gate to Drain “Miller” Charge

3.7

nC

Source-Drain Diode Forward Voltage

(Note 2)

0.63

0.8

V

(Note 2)

0.8

1.2

Reverse Recovery Time

23

36

ns

Reverse Recovery Charge

20

32

nC

Notes:

the user's board design.

2. Pulse Test: Pulse Width < 300

μs, Duty cycle < 2.0%.

4. As an N-ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.

a. 50 °C/W when mounted on a

b. 125 °C/W when mounted on a

minimum pad of 2 oz copper.