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MSP02N10 Datasheet(PDF) 2 Page - Bruckewell Technology LTD

Part No. MSP02N10
Description  N-Channel 100-V (D-S) MOSFET
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Manufacturer  BWTECH [Bruckewell Technology LTD]
Direct Link  http://www.bruckewell-semi.com
Logo BWTECH - Bruckewell Technology LTD

MSP02N10 Datasheet(HTML) 2 Page - Bruckewell Technology LTD

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MSP02N10
N-Channel 100-V (D-S) MOSFET
Publication Order Number: [MSP02N10]
© Bruckewell Technology Corporation Rev. A -2014
Thermal Data
Symbol
Parameter
Max.
Units
RθJC
Maximum Junction-to-Case
a ( t<=5 sec )
35
°C/W
RθJA
Maximum Junction-to- Ambient
a ( t<=5 sec )
50
Note:
1.
Surface Mounted on 1“x1” FR4 Board.
2. Pulse width limited by maximum junction temperature.
Static
Symbol
Test Conditions
Min
Typ.
Max.
Units
VSD
VGS = 0 V , IS = 1.3 A
--
0.77
--
V
VGS(th)
VDS = VGS , ID = 250μA
1
--
3.5
V
IDSS
VDS = 80 V , VGS = 0 V
VDS = 80 V , VGS = 0 V , Tj= 55°C
--
--
1
25
uA
IGSS
VGS = 20 V , VDS = 0 V
--
--
±100
nA
ID(ON)
VDS = 5 V , VGS = 10 V
5
--
--
A
RDS(ON)
VGS = 10 V,ID = 1.5 A
VGS = 4.5 V,ID = 1.4 A
--
--
280
355
m
Ω
GFS*1
VDS = 15 V,ID = 1.5 A
5
S
Dynamic Characteristics
Symbol
Parameter
Test Conditions
Min
Typ.
Max.
Units
CISS
Input Capacitance
VDS = 15 V, VGS = 0 V,
f = 1.0MHz
--
1302
--
pF
COSS
Output Capacitance
--
423
--
pF
CRSS
Reverse Transfer Capacitance
--
171
--
pF
Qg
Total Gate Charge
VDS = 50 V , ID = 1.5 A,
VGS = 4.5 V
--
11
--
nC
Qgs
Gate-Source Charge
--
6
--
nC
Qgd
Gate-Drain Charge
--
4
--
nC
td(on)
Turn-On Dalay Time
VDD = 50 V , ID = 1.5 A,
RL = 33.3 Ω, VGEN = 10 V
RGEN = 6 Ω
--
10
--
ns
tr
Rise Time
--
5
--
ns
td(off)
Turn-Off Dalay Time
--
22
--
ns
tf
Fall Time
--
4
--
ns
Notes
a. Pulse test: PW <= 300us duty cycle <= 2%.
b. Guaranteed by design, not subject to production testing.


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