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IDT6168LA20DB Datasheet(PDF) 7 Page - Integrated Device Technology |
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IDT6168LA20DB Datasheet(HTML) 7 Page - Integrated Device Technology |
7 / 9 page 6.42 IDT6168SA/LA CMOS Static RAM 16K (4K x 4-Bit) Military, Industrial, and Co mmercial Temperature Ranges 7 Timing Waveform of Write Cycle No. 2 (CS Controlled Timing)(1,2,5) NOTES: 1. WE or CS must be HIGH during all address transitions. 2. A write occurs during the overlap of a LOW CS and a LOW WE. 3. tWR is measured from the earlier of CS or WE going HIGH to the end of the write cycle. 4. During this period, the I/O pins are in the output state and input signals should not be applied. 5. If the CS LOW transition occurs simultaneously with or after the WE LOW transition, the outputs remain in the high impedance state. 6. Transition is measured ±200mV from steady state. Timing Waveform of Write Cycle No. 1 (WE Controlled Timing)(1,2,5) CS DATAIN ADDRESS WE DATAOUT 3090 drw 08 t AW t WR t DW t WC tWP t DH t WHZ tOW (4) t AS (6) (4) (6) DATA VALID PREVIOUS DATA VALID DATA VALID (3) t CHZ (6) , tWR CS 3090 drw 09 t AW t DW DATAIN ADDRESS t WC WE tCW t DH AS t t DATA VALID (3) , |
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