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IDT7198L45LB Datasheet(PDF) 5 Page - Integrated Device Technology |
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IDT7198L45LB Datasheet(HTML) 5 Page - Integrated Device Technology |
5 / 8 page 6.4 5 IDT7198S/L CMOS STATIC RAMS 64K (16K x 4-BIT) Added Chip Select and Output Enable Controls MILITARY TEMPERATURE RANGE NOTES: 1. WE is HIGH for Read cycle. 2. Device is continuously selected, CS1 is LOW, CS2 is LOW. 3. Address valid prior to or coincident with CS1 and or CS2 transition LOW. 4. OE is LOW. 5. Transition is measured ±200mV from steady state voltage. TIMING WAVEFORM OF READ CYCLE NO. 1 (1) ADDRESS CS1, 2 DATAOUT OE 2985 drw 07 tRC tAA tOH tACS1, 2 tCLZ1, 2 (5) tCHZ1, 2 (5) tOE tOLZ (5) tOHZ (5) DATA VALID AC ELECTRICAL CHARACTERISTICS (VCC = 5.0V ± 10%, Military Temperature Range) 7198S20 7198S25 7198S35/45 7198S55 7198S70 7198S85 7198L20 7198L25 7198L35/45 7198L55 7198L70 7198L85 Symbol Parameter Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Min. Max. Unit Read Cycle tRC Read Cycle Time 20 — 25 — 35/45 — 55 — 70 — 85 — ns tAA Address Access Time — 19 — 25 — 35/45 — 55 — 70 — 85 ns tACS1,2 (1) Chip Select-1,2 Access Time — 20 — 25 — 35/45 — 55 — 70 — 85 ns tCLZ1,2 (2) Chip Select-1,2 to Output in Low-Z 5 — 5 — 5 — 5 — 5 — 5 — ns tOE Output Enable to Output Valid — 9 — 11 — 20/25 — 35 — 45 — 55 ns tOLZ (2) Output Enable to Output in Low-Z 5 — 5 — 5 — 5 — 5 — 5 — ns tCHZ1,2 (2) Chip Select 1,2 to Output in High-Z — 8 — 10 — 14 — 20 — 25 — 30 ns tOHZ (2) Output Disable to Output in High-Z — 8 — 9 — 15 — 20 — 25 — 30 ns tOH Output Hold from Address Change 5 — 5 — 5 — 5 — 5 — 5 — ns tPU (2) Chip Select to Power Up Time 0 — 0 — 0 — 0 — 0 — 0 — ns tPD (2) Chip Deselect to Power Down Time — 20 — 25 — 35/45 — 55 — 70 — 85 ns NOTES: 2985 tbl 11 1. Both chip selects must be active low for the device to be selected. 2. This parameter is guaranteed by device characterization but is not production tested. |
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