6.4

4

IDT7198S/L

CMOS STATIC RAM 64K (16K x 4-BIT) Added Chip Select and Output Enable Controls

MILITARY TEMPERATURE RANGE

DATA RETENTION CHARACTERISTICS OVER MILITARY TEMPERATURE RANGE

Typ.

(1)

Max.

Symbol

Parameter

Test Condition

Min.

2.0v

3.0V

2.0V

3.0V

Unit

—

2.0

—

—

—

—

V

Data Retention Current

—

10

15

600

900

µA

(3)

Chip Deselect to Data

0—

—

—

—

ns

Retention Time

(3)

Operation Recovery Time

(2)

——

——

ns

(3)

Input Leakage Current

—

—

—

2

2

µA

NOTES:

2985 tbl 09

°C.

3. This parameter is guaranteed by device characterization but is not production tested.

DC ELECTRICAL CHARACTERISTICS

(1)

7198S20

7198S25

7198S35

7198S45 7198S55/70 7198S85

7198L20

7198L25

7198L35

7198L45 7198L55/70 7198L85

Symbol

Parameter

Power

Military

Military

Military

Military

Military

Military

Unit

Operating Power

S

105

105

105

105

105

105

mA

Supply Current,

L

80

80

80

80

80

80

(2)

Dynamic Operating

S

160

155

140

140

140

140

mA

Current,

L

130

120

115

110

110

105

(2)

Standby Power Supply

S

70

60

50

50

50

50

mA

Current (TTL Level),

or

L

50

40

35

35

35

35

(2)

Full Standby Power

S

25

20

20

20

20

20

mA

Supply Current (CMOS

Level)

L

1.5

1.5

1.5

1.5

1.5

1.5

NOTES:

2985 tbl 06

1. All values are maximum guaranteed values.

2985 drw 04

DATA

RETENTION

MODE

4.5V

4.5V

≥2V

CS