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IDT7025S20G Datasheet(PDF) 6 Page - Integrated Device Technology |
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IDT7025S20G Datasheet(HTML) 6 Page - Integrated Device Technology |
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6 / 20 page  6.16 6 IDT7025S/L HIGH-SPEED 8K x 16 DUAL-PORT STATIC RAM MILITARY AND COMMERCIAL TEMPERATURE RANGES DC ELECTRICAL CHARACTERISTICS OVER THE OPERATING TEMPERATURE AND SUPPLY VOLTAGE RANGE(1)(Cont'd.) (VCC = 5.0V ± 10%) 7025X35 7025X55 7025X70 Test Mil. Only Symbol Parameter Condition Version Typ. (2) Max. Typ. (2) Max. Typ. (2) Max. Unit ICC Dynamic Operating CE = VIL, Outputs Open MIL. S 150 300 150 300 140 300 mA Current SEM = VIH L 150 250 150 250 140 250 (Both Ports Active) f = fMAX (3) COM’L. S 150 250 150 250 — — L 150 210 150 210 — — ISB1 Standby Current CEL = CER = VIH MIL. S 13 80 13 80 10 80 mA (Both Ports — TTL SEMR = SEML = VIH L 13 65 136510 65 Level Inputs) f = fMAX (3) COM’L. S 13 60 13 60 — — L13 50 13 50 — — ISB2 Standby Current CE"A"=VIL and CE"B"=VIH (5) MIL. S 85 190 85 190 80 190 mA (One Port — TTL Active Port Outputs Open L 85 160 85 160 80 160 Level Inputs) f = fMAX (3) COM’L. S 85 155 85 155 — — SEMR = SEML = VIH L 85 130 85 130 — — ISB3 Full Standby Current Both Ports CEL and MIL. S 1.0 30 1.0 30 1.0 30 mA (Both Ports — All CER > VCC - 0.2V L 0.2 10 0.2 10 0.2 10 CMOS Level Inputs) VIN > VCC - 0.2V or COM’L. S 1.0 15 1.0 15 — — VIN < 0.2V, f = 0 (4) L 0.2 5 0.2 5 — — SEMR = SEML > VCC - 0.2V ISB4 Full Standby Current CE"A" < 0.2 and MIL. S 80 175 80 175 75 175 mA (One Port — All CE"B" > VCC - 0.2V(5) L 80 150 80 150 75 150 CMOS Level Inputs) SEMR = SEML > VCC - 0.2V VIN > VCC - 0.2V or COM’L. S 80 135 80 135 — — VIN < 0.2V, L 80 110 80 110 — — Active Port Outputs Open, f = fMAX (3) NOTES: 2683 tbl 10 1. "X" in part numbers indicates power rating (S or L). 2. VCC = 5V, TA = +25 °C, and are not production tested. 3. At f = fMAX , address and I/O'S are cycling at the maximum frequency read cycle of 1/tRC, and using “AC Test Conditions” of input levels of GND to 3V. 4. f = 0 means no address or control lines change. 5. Port "A" may be either left or right port. Port "B" is the opposite from port "A". DATA RETENTION MODE VCC CE 2683 drw 05 4.5V tCDR tR VIH VDR VIH 4.5V VDR 2V ≥ DATA RETENTION WAVEFORM DATA RETENTION CHARACTERISTICS OVER ALL TEMPERATURE RANGES (L Version Only) (VLC = 0.2V, VHC = VCC - 0.2V)(4) Symbol Parameter Test Condition Min. Typ. (1) Max. Unit VDR VCC for Data Retention VCC = 2V 2.0 — — V ICCDR Data Retention Current CE > VHC MIL. — 100 4000 µA VIN > VHC or < VLC COM’L. — 100 1500 tCDR (3) Chip Deselect to Data Retention Time SEM > VHC 0— — ns tR (3) Operation Recovery Time tRC (2) —— ns NOTES: 2683 tbl 11 1. TA = +25 °C, VCC = 2V, and are by characterization but are not production tested. 2. tRC = Read Cycle Time 3. This parameter is guaranteed by device characterization but are not production tested. 4 . At Vcc < 2.0V, input leakages are not defined. |
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