IDT7016S/L

HIGH-SPEED 16K x 9 DUAL-PORT STATIC RAM

MILITARY AND COMMERCIAL TEMPERATURE RANGES

6.13

7

AC ELECTRICAL CHARACTERISTICS OVER THE

IDT7016X12

IDT7016X15

Com'l. Only

Com'l. Only

Symbol

Parameter

Min.

Max

Min.

Max.

Unit

READ CYCLE

Read Cycle Time

12

—

15

—

ns

Address Access Time

—

12

—

15

ns

Chip Enable Access Time

(3)

—12

—

15

ns

Output Enable Access Time

—

8

—

10

ns

Output Hold from Address Change

3

—

3

—

ns

Output Low-Z Time

(1, 2)

3—

3

—

ns

Output High-Z Time

(1, 2)

—10

—

10

ns

Chip Enable to Power Up Time

(2)

0—

0

—

ns

Chip Disable to Power Down Time

(2)

—12

—

15

ns

Semaphore Flag Update Pulse (

OE or SEM)10

—

10

—

ns

Semaphore Address Access Time

—

12

—

15

ns

IDT7016X20

IDT7016X25

IDT7016X35

Symbol

Parameter

Min.

Max.

Min.

Max.

Min.

Max.

Unit

READ CYCLE

Read Cycle Time

20

—

25

—

35

—

ns

Address Access Time

—

20

—

25

—

35

ns

Chip Enable Access Time

(3)

—20—25

—35

ns

Output Enable Access Time

—

12

—

13

—

20

ns

Output Hold from Address Change

3

—

3

—

3

—

ns

Output Low-Z Time

(1, 2)

3—

3—

3—

ns

Output High-Z Time

(1, 2)

—12—15

—20

ns

Chip Enable to Power Up Time

(2)

0—

0—

0—

ns

Chip Disable to Power Down Time

(2)

—20—25

—35

ns

Semaphore Flag Update Pulse (

OE or SEM)

10—10

—15—

ns

Semaphore Address Access Time

—

20

—

25

—

35

ns

NOTES:

3190 tbl 11

1. Transition is measured

±200mV from Low or High-impedance voltage with Output Test Load (Figure 2).

2. This parameter is guaranteed by device characterization but not production tested.

3. To access RAM,

4. "X" in part numbers indicates power rating (S or L).