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IDT6116LA35P Datasheet(PDF) 2 Page - Integrated Device Technology |
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IDT6116LA35P Datasheet(HTML) 2 Page - Integrated Device Technology |
2 / 11 page 2 IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and In dustrial Temperature Ranges Pin Configurations Absolute Maximum Ratings(1) Truth Table(1) Pin Description Capacitance (TA = +25°C, f = 1.0 MHZ) DIP/SOIC/SOJ Top View 3089 drw 02 5 6 7 8 9 10 11 12 GND 1 2 3 4 24 23 22 21 20 19 18 17 P24-2 P24-1 D24-2 D24-1 SO24-2 SO24-4 A5 A4 A 3 A2 A1 A0 I/O 0 I/O 1 VCC A9 WE A10 I/O5 I/O4 OE 16 15 14 13 A 7 A6 I/O7 I/O6 CS A8 I/O 2 I/O3 , NOTE: 1. This parameter is determined by device characterization, but is not production tested. Symbol Parameter(1) Conditions Max. Unit CIN Input Capacitance VIN = 0V 8 pF CI/O I/O Capacitance VOUT = 0V 8 pF 3089 tbl 03 NOTES: 1. Stresses greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability. 2. VTERM must not exceed VCC +0.5V. Symbol Rating Com'l. Mil. Unit VTERM (2) Terminal Voltage with Respect to GND -0.5 to +7.0 -0.5 to +7.0 V TA Operating Temperature 0 to +70 -55 to +125 oC TBIAS Temperature Under Bias -55 to +125 -65 to +135 oC TSTG Storage Temperature -55 to +125 -65 to +150 oC PT Power Dissipation 1.0 1.0 W IOUT DC Output Current 50 50 mA 3089 tbl 04 Name Description A0 - A10 Address Inputs I/O0 - I/O7 Data Input/Output CS Chip Select WE Write Enable OE Output Enable VCC Power GND Ground 3089 tbl 01 NOTE: 1. H = VIH, L = VIL, X = Don't Care. Mode CS OE WE I/O Standby H X X High-Z Read L L H DATAOUT Read L H H High-Z Write L X L DATAIN 3089 tbl 02 |
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