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IDT70824S45PFB Datasheet(PDF) 5 Page - Integrated Device Technology |
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IDT70824S45PFB Datasheet(HTML) 5 Page - Integrated Device Technology |
5 / 21 page 6.42 IDT70824S/L High-Speed 4K x 16 Sequential Access Random Access Memory Military and Commercial Temperature Ranges 5 DC Electrical Characteristics Over the Operating Temperature and Supply Voltage Range(1,2,8)(VCC = 5.0V ± 10%) Data Retention Characteristics Over All Temperature Ranges (L Version Only) (VLC < 0.2V, VHC > VCC - 0.2V) NOTES 1. 'X' in part number indicates power rating (S or L). 2. VCC = 5V, TA = +25°C; guaranteed by device characterization but not production tested. 3. At f = fMAX, address, control lines (except Output Enable), and SCLK are cycling at the maximum frequency read cycle of 1/tRC. 4. f = 0 means no address or control lines change. 5. SCE may transition, but is Low (SCE=VIL) when clocked in by SCLK. 6. SCE may be - 0.2V, after it is clocked in, since SCLK=VIH must be clocked in prior to powerdown. 7. If one port is enabled (either CE or SCE = LOW) then the other port is disabled (SCE or CE = HIGH, respectively). CMOS HIGH > Vcc - 0.2V and LOW < 0.2V, and TTL HIGH = VIH and LOW = VIL. 8. Industrial temperature: for specific speeds, packages and powers contact your sales office. NOTES : 1. TA = +25°C, VCC = 2V; guaranteed by device characterization but not production tested. 2. tRC = Read Cycle Time 3. This parameter is guaranteed by device characterization, but is not production tested. 4. To initiate data retention, SCE = VIH must be clocked in. 70824X20 Com'l Only 70824X25 Com'l Only 70824X35 Com'l & Military 70824X45 Com'l & Military Symbol Parameter Test Condition Version Typ. (2) Max. Typ. (2) Max. Typ. (2) Max. Typ. (2) Max. Unit ICC Dynamic Operating Current (Both Ports Active) CEL and CER = VIL, Outputs Open SCE = VIL(5) f = fMAX (3) COM'L S L 180 180 380 330 170 170 360 310 160 160 340 290 155 155 340 290 mA MIL & IND S L ____ ____ ____ ____ ____ ____ ____ ____ 160 160 400 340 155 155 400 340 ISB1 Standby Current (Both Ports - TTL Level Inputs) SCE and CE = VIH(7) CMD = VIH f = fMAX (3) COM'L S L 25 25 70 50 25 25 70 50 20 20 70 50 16 16 70 50 mA MIL & IND S L ____ ____ ____ ____ ____ ____ ____ ____ 20 20 85 65 16 16 85 65 ISB2 Standby Current (One Port - TTL Level Inputs) CE or SCE = VIH Active Port Outputs Open, f=fMAX (3) COM'L S L 115 115 260 230 105 105 250 220 95 95 240 210 90 90 240 210 mA MIL & IND S L ____ ____ ____ ____ ____ ____ ____ ____ 95 95 290 250 90 90 290 250 ISB3 Full Standby Current (Both Ports - CMOS Level Inputs) Both Ports CE and SCE > VCC - 0.2V(6) VIN > VCC - 0.2V or VIN < 0. 2V, f = 0 (4) COM'L S L 1.0 0.2 15 5 1.0 0.2 15 5 1.0 0.2 15 5 1.0 0.2 15 5 mA MIL & IND S L ____ ____ ____ ____ ____ ____ ____ ____ 1.0 0.2 30 10 1.0 0.2 30 10 ISB4 Full Standby Current (One Port - CMOS Level Inputs) One Port CE or SCE > VCC - 0.2V(6,7) Outputs Open (Active Port) f = fMAX (3) VIN > VCC - 0.2V or VIN < 0.2V COM'L S L 110 110 240 200 100 100 230 190 90 90 220 180 85 85 220 180 mA MIL & IND S L ____ ____ ____ ____ ____ ____ ____ ____ 90 90 260 215 85 85 260 215 3099 tbl 08 Symbol Parameter Test Condition Min. Typ. (1) Max. Unit VDR VCC for Data Retention VCC = 2V 2.0 ___ ___ V ICCDR Data Retention Current CE = VHC VIN = VHC or = VLC MIL. & IND. ___ 100 4000 µA COM'L. ___ 100 1500 tCDR (3) Chip Deselect to Data Retention Time SCE = VHC(4) when SCLK = u CMD > VHC ___ ___ ___ V tR( 3) Operation Recovery Time tRC (2) ___ ___ V 3099 tbl 09 |
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