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IDT6116LA70DB Datasheet(PDF) 7 Page - Integrated Device Technology |
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IDT6116LA70DB Datasheet(HTML) 7 Page - Integrated Device Technology |
7 / 11 page 6.42 IDT6116SA/LA CMOS Static RAM 2K (16K x 8-Bit) Military, Commercial, and In dustrial Temperature Ranges 7 Timing Waveform of Read Cycle No. 2(1,2,4) Timing Waveform of Read Cycle No. 1(1,3) Timing Waveform of Read Cycle No. 3(1,3,4) NOTES: 1. WE is HIGH for Read cycle. 2. Device is continously selected, CS is LOW. 3. Address valid prior to or coincident with CS transition LOW. 4. OE is LOW. 5. Transition is measured ±500mV from steady state. ADDRESS OE CS tRC tAA tOE tACS DATAOUT tOH tOLZ (5) tCLZ (5) tOHZ (5) tCHZ (5) 3089 drw 06 DATA VALID tPD ICC ISB tPU VCC Supply Currents , ADDRESS tRC tAA tOH tOH DATAOUT 3089 drw 07 PREVIOUS DATA VALID DATA VALID , CS tACS DATAOUT tCLZ (5) tCHZ (5) DATA VALID 3089 drw 08 , |
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