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IDT7015S Datasheet(PDF) 9 Page - Integrated Device Technology

Part No. IDT7015S
Description  HIGH-SPEED 8K x 9 DUAL-PORT STATIC RAM
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Manufacturer  IDT [Integrated Device Technology]
Direct Link  http://www.idt.com
Logo IDT - Integrated Device Technology

IDT7015S Datasheet(HTML) 9 Page - Integrated Device Technology

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IDT7015S/L
HIGH-SPEED 8K x 9 DUAL-PORT STATIC RAM
MILITARY AND COMMERCIAL TEMPERATURE RANGES
6.12
9
AC ELECTRICAL CHARACTERISTICS OVER THE
OPERATING TEMPERATURE AND SUPPLY VOLTAGE(5)
IDT7015X12
IDT7015X15
IDT7015X17
Com'l. Only
Com'l. Only
Com'l. Only
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
WRITE CYCLE
tWC
Write Cycle Time
12
15
17
ns
tEW
Chip Enable to End-of-Write
(3)
10
12
12
ns
tAW
Address Valid to End-of-Write
10
12
12
ns
tAS
Address Set-up Time
(3)
0
0
0
ns
tWP
Write Pulse Width
10
12
12
ns
tWR
Write Recovery Time
2
2
2
ns
tDW
Data Valid to End-of-Write
10
10
10
ns
tHZ
Output High-Z Time
(1, 2)
10
10
10
ns
tDH
Data Hold Time
(4)
0
0
0
ns
tWZ
Write Enable to Output in High-Z
(1, 2)
10
10
10
ns
tOW
Output Active from End-of-Write
(1, 2, 4)
3
3
0
ns
tSWRD
SEM Flag Write to Read Time
5
5
5
ns
tSPS
SEM Flag Contention Window
5
5
5
ns
IDT7015X20
IDT7015X25
IDT7015X35
Symbol
Parameter
Min.
Max.
Min.
Max.
Min.
Max.
Unit
WRITE CYCLE
tWC
Write Cycle Time
20
25
35
ns
tEW
Chip Enable to End-of-Write
(3)
15
20
30
ns
tAW
Address Valid to End-of-Write
15
20
30
ns
tAS
Address Set-up Time
(3)
0—
0—
0—
ns
tWP
Write Pulse Width
15
20
25
ns
tWR
Write Recovery Time
2
2
2
ns
tDW
Data Valid to End-of-Write
15
15
15
ns
tHZ
Output High-Z Time
(1, 2)
—12—15
—20
ns
tDH
Data Hold Time
(4)
0—
0—
0—
ns
tWZ
Write Enable to Output in High-Z
(1, 2)
—12—15
—20
ns
tOW
Output Active from End-of-Write
(1, 2, 4)
3—
3—
3—
ns
tSWRD
SEM Flag Write to Read Time
5
5
5
ns
tSPS
SEM Flag Contention Window
5
5
5
ns
NOTES:
2954 tbl 12
1. Transition is measured
±200mV from Low or High-impedance voltage with the Output test load (Figure 2).
2. This parameter is guaranteed by device characterization but not tested.
3. To access RAM,
CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time.
4. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary
over voltage and temperature, the actual tDH will always be smaller than the actual tOW.
5. "X" in part numbers indicates power rating (S or L).


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