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IDT7015S Datasheet(PDF) 9 Page - Integrated Device Technology |
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IDT7015S Datasheet(HTML) 9 Page - Integrated Device Technology |
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9 / 20 page  IDT7015S/L HIGH-SPEED 8K x 9 DUAL-PORT STATIC RAM MILITARY AND COMMERCIAL TEMPERATURE RANGES 6.12 9 AC ELECTRICAL CHARACTERISTICS OVER THE OPERATING TEMPERATURE AND SUPPLY VOLTAGE(5) IDT7015X12 IDT7015X15 IDT7015X17 Com'l. Only Com'l. Only Com'l. Only Symbol Parameter Min. Max. Min. Max. Min. Max. Unit WRITE CYCLE tWC Write Cycle Time 12 — 15 — 17 — ns tEW Chip Enable to End-of-Write (3) 10 — 12 — 12 — ns tAW Address Valid to End-of-Write 10 — 12 — 12 — ns tAS Address Set-up Time (3) 0 — 0 — 0 — ns tWP Write Pulse Width 10 — 12 — 12 — ns tWR Write Recovery Time 2 — 2 — 2 — ns tDW Data Valid to End-of-Write 10 — 10 — 10 — ns tHZ Output High-Z Time (1, 2) — 10 — 10 — 10 ns tDH Data Hold Time (4) 0 — 0 — 0 — ns tWZ Write Enable to Output in High-Z (1, 2) — 10 — 10 — 10 ns tOW Output Active from End-of-Write (1, 2, 4) 3 — 3 — 0 — ns tSWRD SEM Flag Write to Read Time 5 — 5 — 5 — ns tSPS SEM Flag Contention Window 5 — 5 — 5 — ns IDT7015X20 IDT7015X25 IDT7015X35 Symbol Parameter Min. Max. Min. Max. Min. Max. Unit WRITE CYCLE tWC Write Cycle Time 20 — 25 — 35 — ns tEW Chip Enable to End-of-Write (3) 15 — 20 — 30 — ns tAW Address Valid to End-of-Write 15 — 20 — 30 — ns tAS Address Set-up Time (3) 0— 0— 0— ns tWP Write Pulse Width 15 — 20 — 25 — ns tWR Write Recovery Time 2 — 2 — 2 — ns tDW Data Valid to End-of-Write 15 — 15 — 15 — ns tHZ Output High-Z Time (1, 2) —12—15 —20 ns tDH Data Hold Time (4) 0— 0— 0— ns tWZ Write Enable to Output in High-Z (1, 2) —12—15 —20 ns tOW Output Active from End-of-Write (1, 2, 4) 3— 3— 3— ns tSWRD SEM Flag Write to Read Time 5 — 5 — 5 — ns tSPS SEM Flag Contention Window 5 — 5 — 5 — ns NOTES: 2954 tbl 12 1. Transition is measured ±200mV from Low or High-impedance voltage with the Output test load (Figure 2). 2. This parameter is guaranteed by device characterization but not tested. 3. To access RAM, CE = VIL and SEM = VIH. To access semaphore, CE = VIH and SEM = VIL. Either condition must be valid for the entire tEW time. 4. The specification for tDH must be met by the device supplying write data to the RAM under all operating conditions. Although tDH and tOW values will vary over voltage and temperature, the actual tDH will always be smaller than the actual tOW. 5. "X" in part numbers indicates power rating (S or L). |
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