6

µPA1552B

SINGLE AVALANCHE ENERGY vs.

INDUCTIVE LOAD

L - Inductive Load - H

1.0

10

0.1

100

1 m

→ 0

Ω

10

10 m

E

mJ

SINGLE AVALANCHE ENERGY

DERATING FACTOR

0

25

20

80

50

75

100

125

150

Ω

→ 0

100

60

40

µ

REFERENCE

Document Name

Document No.

NEC semiconductor device reliability/quality control system

TEI-1202

Quality grade on NEC semiconductor devices

IEI-1209

Semiconductor device mounting technology manual

IEI-1207

Semiconductor device package manual

IEI-1213

Guide to quality assurance for semiconductor devices

MEI-1202

Semiconductor selection guide

MF-1134

Power MOS FET features and application switching power supply

TEA-1034

Application circuits using Power MOS FET

TEA-1035

Safe operating area of Power MOS FET

TEA-1037