µPA1523B

7

SINGLE AVALANCHE CURRENT vs.

INDUCTIVE LOAD

L - Inductive Load - H

–0.1

–1.0

–10

–0.1

100

1 m

10

µµ

10 m

SINGLE AVALANCHE ENERGY

DERATING FACTOR

0

25

20

80

50

75

100

125

150

100

60

40

E

mJ

Ω

→ 0

≤ 1.0 A

→ 0

Ω

REFERENCE

Document Name

Document No.

NEC semiconductor for device reliability/quality control system

TEI-1202

Quality grade on NEC semiconductor devices

IEI-1209

Semiconductor device mounting technology manual

C10535E

Semiconductor device package manual

C10943X

Guide to quality assurance for semiconductor devices

MEI-1202

Semiconductor selection guide

X10679E

Power MOS FET features and application switching power supply

TEA-1034

Application circuits using Power MOS FET

TEA-1035

Safe operating area of Power MOS FET

TEA-1037