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UPA1478 Datasheet(PDF) 1 Page - NEC |
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UPA1478 Datasheet(HTML) 1 Page - NEC |
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SILICON TRANSISTOR ARRAY DESCRIPTION The µPA1478 is NPN silicon epitaxial Darlington Power Transistor Array that built in Surge Absorber and 4 circuits designed for driving solenoid, relay, lamp and so on. FEATURES • Surge Absorber (Zener Diode) built in. • Easy mount by 0.1 inch of terminal interval. • High hFE for Darlington Transistor. ORDERING INFORMATION Part Number Package Quality Grade µPA1478H 10 Pin SIP Standard Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C) Collector to Base Voltage VCBO 31 ±4V Collector to Emitter Voltage VCEO 31 ±4V Emitter to Base Voltage VEBO 7V Surge Sustaining Energy ECEO (SUS) 40 mJ/unit Collector Current (DC) IC(DC) ±2 A/unit Collector Current (pulse) IC(pulse)* ±4 A/unit Total Power Dissipation PT1 ** 3.5 W Total Power Dissipation PT2 *** 28 W Junction Temperature TJ 150 ˚C Storage Temperature Tstg –55 to +150 ˚C * PW ≤ 300 µs, Duty Cycle ≤ 10 % ** 4 Circuits, Ta = 25 ˚C *** 4 Circuits, Tc = 25 ˚C µPA1478 NPN SILICON POWER TRANSISTOR ARRAY LOW SPEED SWITCHING USE (DARLINGTON TRANSISTOR) INDUSTRIAL USE PACKAGE DIMENSION (in millimeters) 1 2 3 4 5 6 7 8 9 10 26.8 MAX. 1.4 0.6 ±0.1 2.54 4.0 1.4 0.5 ±0.1 CONNECTION DIAGRAM 2 3 1 468 57 9 10 (C) (E) (B) R1 R2 PIN No. 2, 4, 6, 8 3, 5, 7, 9 1, 10 : Base (B) : Collector (C) : Emitter (E) R1 = 10 k Ω R2 = 500 Ω . . . . The information in this document is subject to change without notice. © 1994 DATA SHEET Document No. IC-3566 (O.D. No. IC-6634) Date Published November 1994 P Printed in Japan |
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