MITSUBISHI (OPTICAL DEVICES)

FU-68SDF-V810MxxB

1.55

mm DFB-LD MODULE WITH SINGLEMODE FIBER PIGTAIL

(WAVELENGTH SELECTED, BIAS CIRCUIT INTEGRATED, DIGITAL APPLICATION)

ELECTRICAL/OPTICAL CHARACTERISTICS (Tld=Tset, Tc=25

°C unless otherwise noted)

Parameter

Symbol

Test Conditions

Limits

Unit

Min.

Typ.

Max.

Threshold current

Ith

CW

-

10

25

mA

Optical output power

at threshold current

Pth

CW, If=Ith

-

-

150

mW

Operating current

Iop

CW, Pf=10mW

-

50

95

mA

Operating voltage

Vop

CW, Pf=10mW

-

1.3

1.8

V

Input impedance

Zin

Pf=10mW

-

25

-

W

Light-emission central

wavelength

lc

(Note 1)

(Note 2)

nm

Central wavelength drift with

case temp.

Dlc/DTc Tc=-20~70°C

-1

-

0

pm/

°C

Laser operating temperature

Tset

-

20

-

35

°C

Spectral width

Dl

(Note 1), -20dB

-

0.2

0.4

nm

Side mode suppression ratio

Sr

(Note 1)

33

40

-

dB

Dispersion penalty

Pp

(Note 1), at 10

+1800ps/nm

--

2

dB

Cutoff frequency

(-1.5dB optical)

fc

Pf=10mW

3.5

-

-

GHz

Rise and fall time

(10~90%)

tr, tf

(Note 1)

-

-

150

psec

Relative intensity noise

Nr

CW, Pf=10mW,

0.5~3GHz

-

-155

-145

dB/Hz

Tracking error

(Note 3)

Er

Tc=-20~70

°C,

APC, ATC

-

-

0.5

dB

Differential efficiency

h

CW, Pf=10mW

0.15

0.25

0.35

mW/

mA

Linearity

Dh

CW, Pf=1~12mW,

(Note 4)

-20

-

20

%

Monitor current

Imon

CW, Pf=10mW, Vrd=5V

0.2

-

3

mA

Tc=25

°C35

-

-

Optical isolation

Iso

Tc=-20~70

°C

23

-

-

dB

Dark current (PD)

Id

Vrd=5V, Tc=-20~70

°C

-

-

0.1

mA

Capacitance (PD)

Ct

Vrd=5V, f=1MHz

-

-

10

pF

Note 1) 2.48832Gb/s NRZ, 2

be greater than 40dB in order to ensure the specified performance.

Note 2) See Table 1.

Note 3) Er=max|10

´log(Pf / Pf@25°C)|

Note 4) Variation of the differential efficiency from the straight line between 1mW and 10mW.