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UPA1453 Datasheet(PDF) 1 Page - NEC

Part No. UPA1453
Description  PNP SILICON POWER TRANSISTOR ARRAY HIGH SPEED SWITCHING USE INDUSTRIAL USE
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Manufacturer  NEC [NEC]
Direct Link  http://www.nec.com/
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UPA1453 Datasheet(HTML) 1 Page - NEC

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SILICON TRANSISTOR ARRAY
DESCRIPTION
The
µPA1453 is PNP silicon epitaxial Power Transistor
Array that built in 4 circuits designed for driving solenoid,
relay, lamp and so on.
FEATURES
Easy mount by 0.1 inch of terminal interval.
High hFE. Low VCE(sat).
hFE = 100 to 400 (at IC = –2 A)
VCE(sat) = –0.3 V MAX. (at IC = –2 A)
ORDERING INFORMATION
Part Number
Package
Quality Grade
µPA1453H
10 Pin SIP
Standard
Please refer to "Quality grade on NEC Semiconductor Devices"
(Document number IEI-1209) published by NEC Corporation to
know the specification of quality grade on the devices and its
recommended applications.
ABSOLUTE MAXIMUM RATINGS (Ta = 25 ˚C)
Collector to Base Voltage
VCBO
–60
V
Collector to Emitter Voltage
VCEO
–60
V
Emitter to Base Voltage
VEBO
–7
V
Collector Current (DC)
IC(DC)
–5
A/unit
Collector Current (pulse)
IC(pulse)
*
–10
A/unit
Base Current (DC)
IB(DC)
–1.0
A/unit
Total Power Dissipation
PT1
**
3.5
W
Total Power Dissipation
PT2
***
28
W
Junction Temperature
Tj
150
˚C
Storage Temperature
Tstg
–55 to +150
˚C
* PW
≤ 300
µs, Duty Cycle ≤ 10 %
** 4 Circuits, Ta = 25 ˚C
*** 4 Circuits, Tc = 25 ˚C
Document No. IC-3519
(O. D. No. IC-6339)
Date Published September 1994 P
Printed in Japan
µPA1453
PNP SILICON POWER TRANSISTOR ARRAY
HIGH SPEED SWITCHING USE
INDUSTRIAL USE
PACKAGE DIMENSION
(in millimeters)
1 2 3 4 5 6 7 8 9 10
26.8 MAX.
1.4
0.6 ±0.1
2.54
4.0
1.4
0.5 ±0.1
CONNECTION DIAGRAM
PIN No.
2, 4, 6, 8
3, 5, 7, 9
1, 10
: Base (B)
: Collector (C)
: Emitter (E)
3
2
1
4
5
7
6
8
9
10
The information in this document is subject to change without notice.
©
1994
DATA SHEET


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