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HY57V641620HG-I Datasheet(PDF) 4 Page - Hynix Semiconductor

Part # HY57V641620HG-I
Description  4 Banks x 1M x 16Bit Synchronous DRAM
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Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

HY57V641620HG-I Datasheet(HTML) 4 Page - Hynix Semiconductor

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HY57V641620HG
Rev. 1.0/Jan. 02
4
ABSOLUTE MAXIMUM RATINGS
Note : Operation at above absolute maximum rating can adversely affect device reliability
DC OPERATING CONDITION (TA= -40 to 85°C)
Note :
1.All voltages are referenced to VSS = 0V
2.VDD(min) of HY57V641620HG(L)T-5I/55I/6I is 3.135V
3.VIH (max) is acceptable 5.6V AC pulse width with
≤3ns of duration
4.VIL (min) is acceptable -2.0V AC pulse width with
≤3ns of duration
AC OPERATING CONDITION (TA= -40 to 85°C, VDD=3.3 ± 0.3VNote2, VSS=0V)
Note :
1. Output load to measure access time is equivalent to two TTL gates and one capacitor (50pF)
For details, refer to AC/DC output circuit
2.VDD(min) of HY57V641620HG(L)T-5I/55I/6I is 3.135V
Parameter
Symbol
Rating
Unit
Ambient Temperature
TA
-40 ~ 85
°C
Storage Temperature
TSTG
-55 ~ 125
°C
Voltage on Any Pin relative to VSS
VIN, VOUT
-1.0 ~ 4.6
V
Voltage on VDD relative to VSS
VDD, VDDQ
-1.0 ~ 4.6
V
Short Circuit Output Current
IOS
50
mA
Power Dissipation
PD
1W
Soldering Temperature
⋅ Time
TSOLDER
260
⋅ 10
°C ⋅ Sec
Parameter
Symbol
Min
Typ.
Max
Unit
Note
Power Supply Voltage
VDD, VDDQ
3.0
3.3
3.6
V
1,2
Input High Voltage
VIH
2.0
3.0
VDDQ + 2.0
V
1,3
Input Low Voltage
VIL
VSSQ - 2.0
0
0.8
V
1,4
Parameter
Symbol
Value
Unit
Note
AC Input High / Low Level Voltage
VIH / VIL
2.4/0.4
V
Input Timing Measurement Reference Level Voltage
Vtrip
1.4
V
Input Rise / Fall Time
tR / tF
1
ns
Output Timing Measurement Reference Level
Voutref
1.4
V
Output Load Capacitance for Access Time Measurement
CL
50
pF
1


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