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HY57V161610ETP-I Datasheet(PDF) 5 Page - Hynix Semiconductor

Part No. HY57V161610ETP-I
Description  2 Banks x 512K x 16 Bit Synchronous DRAM
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Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

HY57V161610ETP-I Datasheet(HTML) 5 Page - Hynix Semiconductor

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HY57V161610ETP-I
Rev. 0.1 / Nov. 2003
5
CAPACITANCE (TA=25°C, f=1MHz)
OUTPUT LOAD CIRCUIT
DC CHARACTERISTICS I (TA=-40°C to 85°C)
Note :
1.VDD(min) is 3.15V when HY57V161610ETP-7I operates at CAS latency=2 and tCK2=8.9ns.
2.VDD(min) of HY57V161610ETP-5I/55I is 3.15V
3.VIN = 0 to 3.6V, All other pins are not under test = 0V
4.DOUT is disabled, VOUT=0 to 3.6V
Parameter
Pin
Symbol
Min
Max
Unit
Input capacitance
CLK
CI1
2.5
4
pF
A0 ~ A10, BA
CKE, CS, RAS, CAS, WE, UDQM, LDQM
CI2
2.5
5
pF
Data input / output capacitance
DQ0 ~ DQ15
CI/O
46.5
pF
Parameter
Symbol
Min.
Max
Unit
Note
Power Supply Voltage
VDD
3.0
3.6
V
1, 2
Input leakage current
IL
-1
1
uA
3
Output leakage current
IO
-1
1
uA
4
Output high voltage
VOH
2.4
-
V
IOH = -4mA
Output low voltage
VOL
-0.4
V
IOL =+4mA
Vtt=1.4V
RT=250
30pF
Output
DC Output Load Circuit
30pF
Output
AC Output Load Circuit


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