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HY51VS65163HG Datasheet(PDF) 4 Page - Hynix Semiconductor

Part No. HY51VS65163HG
Description  4M x 16Bit EDO DRAM
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Manufacturer  HYNIX [Hynix Semiconductor]
Direct Link  http://www.skhynix.com/kor/main.do
Logo HYNIX - Hynix Semiconductor

HY51VS65163HG Datasheet(HTML) 4 Page - Hynix Semiconductor

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HY51V(S)65163HG/HGL
Rev.0.1/Apr.01
4
DC CHARACTERISTICS (Vcc = 3.3V +/- 10%, TA=0 to 70°C)
Note :
1. Icc depends on output load condition when the device is selected, Icc(max) is specified at the output open condition
2. Address can be changed once or less while RAS=VIL
3. Measured with one sequential address change per EDO cycle, tHPC
4. VIH>=Vcc-0.2V, 0V<=VIL<=0.2V
5. L-Version
Symbol
Parameter
Min
Max
Unit
Note
VOH
Output Level
Output Level voltage(Iout= -2mA)
2.4
Vcc
V
VOL
Output Level
Output Level voltage(Iout=2mA)
0
0.4
V
ICC1
Operating current ( tRC = tRC min)
45ns
-
130
mA
1, 2
50ns
-
120
60ns
-
110
ICC2
Standby current (TTL interface)
Power supply standby current
(/RAS, /UCAS,/LCAS=VIH, Dout = High-Z)
-
1
mA
ICC3
/RAS only refresh current (tRC= tRC min)
45ns
-
130
mA
2
50ns
-
120
60ns
-
110
ICC4
Extended data out page mode current
(/RAS=VIL, /CAS, Address cycling : tHPC=tHPC min)
45ns
-
100
mA
1, 3
50ns
-
90
60ns
-
80
ICC5
CMOS interface ( /RAS, /UCAS, /LCAS >= Vcc-0.2V, Dout = High-Z)
-
0.5
mA
Standby current ( L-version)
-
200
uA
4
ICC6
/CAS-before-/RAS refresh current (tRC=tRC min)
45ns
-
130
mA
50ns
-
120
60ns
-
110
ICC7
Battery back up operating current (standby with CBR)
(tRC=31.25us, tRAS=300ns, Dout=High-Z)
-
350
uA
4, 5
ICC8
Standby current (CMOS)
Power supply standby current
/RAS=VIH, /UCAS./LCAS=VIL, Dout=Enable)
-
5
mA
1
ICC9
Self refresh current
(/RAS, /UCAS, /LCAS <=0.2V, Dout=High-Z)
-
350
uA
5
II(L)
Input leakage current, Any input (0V<= Vin<=Vcc)
-5
5
uA
IO(L)
Output leakage current, (Dout is disabled, 0V<= Vout<=Vcc)
-5
5
uA


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