Features

• High Surge Capability

DO-9 Package

• Not ESD Sensitive

Note:

1. Standard polarity: Stud is cathode.

3. Stud is base.

Parameter

Symbol

S300B (R)

S300D (R)

S300E (R)

S300G (R)

Unit

Repetitive peak reverse

voltage

100

200

300

400

V

RMS reverse voltage

70

140

212

280

V

Silicon Standard

Recovery Diode

Conditions

600

420

2. Reverse polarity (R): Stud is anode.

S300B thru S300JR

S300J (R)

DC blocking voltage

100

200

300

400

V

Continuous forward

current

300

300

300

300

A

Operating temperature

-55 to 150

-55 to 150

-55 to 150

-55 to 150

°C

Storage temperature

-55 to 150

-55 to 150

-55 to 150

-55 to 150

°C

Parameter

Symbol

S300B (R)

S300D (R)

S300E (R)

S300G (R)

Unit

Diode forward voltage

1.2

1.2

1.2

1.2

10

10

10

10

μA

12

12

12

12

mA

Thermal characteristics

Thermal resistance,

junction - case

0.16

0.16

0.16

0.16

°C/W

-55 to 150

6850

6850

600

Reverse current

-55 to 150

S300J (R)

10

0.16

1.2

12

V

A

6850

Conditions

6850

6850

300

Electrical characteristics, at Tj = 25 °C, unless otherwise specified

Surge non-repetitive

forward current, Half Sine

Wave

www.genesicsemi.com/silicon-products/standard-recovery-rectifiers/

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