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BFQ540_2015 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

Part No. BFQ540_2015
Description  NPN wideband transistor
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Maker  JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]
Homepage  http://www.jmnic.com
Logo JMNIC - Quanzhou Jinmei Electronic Co.,Ltd.

BFQ540_2015 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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2000 May 23
2
Philips Semiconductors
Product specification
NPN wideband transistor
BFQ540
FEATURES
• High gain
• High output voltage
• Low noise
• Gold metallization ensures
excellent reliability
• Low thermal resistance.
APPLICATIONS
• VHF, UHF and CATV amplifiers.
DESCRIPTION
NPN wideband transistor in a SOT89
plastic package.
PINNING
PIN
DESCRIPTION
1
emitter
2
collector
3
base
Fig.1 SOT89.
Marking code: N4.
page
12
3
Bottom view
MBK514
QUICK REFERENCE DATA
Note
1. Ts is the temperature at the soldering point of the collector pin.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−−
20
V
VCES
collector-emitter voltage
RBE =0
−−
15
V
VEBO
collector-base voltage
open collector
−−
2V
IC
collector current (DC)
−−
120
mA
Ptot
total power dissipation
Ts ≤ 60 °C; note 1
−−
1.2
W
hFE
DC current gain
IC = 40 mA; VCE =8V; Tj =25 °C
100
120
250
fT
transition frequency
IC = 40 mA; VCE = 8 V; f = 1 GHz;
Tamb =25 °C
9
GHz
insertion power gain
IC = 40 mA; VCE =8V;
f = 900 MHz; Tamb =25 °C
12
13
dB
F
noise figure
IC = 40 mA; VCE =8V;
f = 900 MHz;
ΓS = Γopt
1.9
2.4
dB
s
21
2


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