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BFQ67W_2015 Datasheet(PDF) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd.

Part No. BFQ67W_2015
Description  BFQ67W_2015
Download  10 Pages
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Maker  JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]
Homepage  http://www.jmnic.com
Logo JMNIC - Quanzhou Jinmei Electronic Co.,Ltd.

BFQ67W_2015 Datasheet(HTML) 3 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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September 1995
3
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFQ67W
THERMAL RESISTANCE
Note
1. Ts is the temperature at the soldering point of the collector tab.
CHARACTERISTICS
Tj =25 °C, unless otherwise specified.
Note
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
Rth j-s
thermal resistance from junction to
soldering point
up to Ts =118 °C; note 1
190 K/W
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
ICBO
collector cut-off current
IE = 0; VCB =5 V
−−
50
nA
hFE
DC current gain
IC = 15 mA; VCE = 5 V
60
100
Cc
collector capacitance
IE =ie = 0; VCB = 8 V; f = 1 MHz
0.7
pF
Ce
emitter capacitance
IC =ic = 0; VEB = 0.5 V; f = 1 MHz
1.3
pF
Cre
feedback capacitance
IC = 0; VCB = 8 V; f = 1 MHz
0.5
pF
fT
transition frequency
IC = 15 mA; VCE = 8 V; f = 2 GHz;
Tamb =25 °C
8
GHz
GUM
maximum unilateral power gain
(note 1)
IC = 15 mA; VCE = 8 V; f = 1 GHz
Tamb =25 °C
13
dB
IC = 15 mA; VCE = 8 V; f = 2 GHz;
Tamb =25 °C
8
dB
F
noise figure
Γ
s = Γopt;IC = 5 mA; VCE =8 V;
f=1GHz
1.3
dB
Γ
s = Γopt;IC = 15 mA; VCE =8 V;
f=1GHz
2
dB
Γ
s = Γopt;IC = 5 mA; VCE =8 V;
f=2GHz
2.2
dB
IC = 5 mA; VCE =8 V;
f = 2 GHz; Zs =60 Ω
2.5
dB
Γs = Γopt;IC = 15 mA; VCE =8 V;
f=2GHz
2.7
dB
IC = 5 mA; VCE =8 V;
f = 2 GHz; Zs =60 Ω
3
dB
G
UM
10 log
S
21
2
1S
11
2


1S
22
2


--------------------------------------------------------------
dB.
=


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