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BFQ67W_2015 Datasheet(PDF) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

Part No. BFQ67W_2015
Description  BFQ67W_2015
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Maker  JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]
Homepage  http://www.jmnic.com
Logo JMNIC - Quanzhou Jinmei Electronic Co.,Ltd.

BFQ67W_2015 Datasheet(HTML) 2 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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September 1995
2
Philips Semiconductors
Product specification
NPN 8 GHz wideband transistor
BFQ67W
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability
• SOT323 envelope.
DESCRIPTION
NPN transistor in a plastic SOT323
envelope.
It is designed for wideband
applications such as satellite TV
tuners and RF portable
communications equipment up to
2 GHz.
PINNING
PIN
DESCRIPTION
Code: V2
1
base
2
emitter
3
collector
Fig.1 SOT323.
handbook, 2 columns
3
12
MBC870
Top view
QUICK REFERENCE DATA
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
Note
1. Ts is the temperature at the soldering point of the collector tab.
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−−
20
V
VCEO
collector-emitter voltage
open base
−−
10
V
IC
DC collector current
−−
50
mA
Ptot
total power dissipation
up to Ts =118 °C; note 1
−−
300
mW
hFE
DC current gain
IC = 15 mA; VCE = 5 V; Tj =25 °C
60
100
fT
transition frequency
IC = 15 mA; VCE = 8 V; f = 2 GHz;
Tamb =25 °C
8
GHz
GUM
maximum unilateral power gain
Ic = 15 mA; VCE = 8 V; f = 1 GHz;
Tamb =25 °C
13
dB
F
noise figure
Ic = 5 mA; VCE = 8 V; f = 1 GHz
1.3
dB
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
20
V
VCEO
collector-emitter voltage
open base
10
V
VEBO
emitter-base voltage
open collector
2.5
V
IC
DC collector current
50
mA
Ptot
total power dissipation
up to Ts =118 °C; note 1
300
mW
Tstg
storage temperature
−65
150
°C
Tj
junction temperature
175
°C


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