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STS05DTP03 Datasheet(PDF) 3 Page - STMicroelectronics

Part No. STS05DTP03
Description  Dual NPN-PNP complementary bipolar transistor
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STS05DTP03 Datasheet(HTML) 3 Page - STMicroelectronics

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STS05DTP03
Electrical characteristics
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2
Electrical characteristics
(TCASE = 25 °C; unless otherwise specified)
Table 4.
Q1-NPN electrical characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE = 0)
VCB = 30 V
10
µA
ICEO
Collector cut-off current
(IB = 0)
VCE = 30 V
1
µA
IEBO
Emitter cut-off current
(IB = 0)
VEB = 6 V
10
µA
V(BR)CEO
(1)
Collector-emitter breakdown
voltage (IB = 0)
IC = 10 mA
30
V
VCE(sat)
(1)
Collector-emitter saturation
voltage
IC = 1 A
IB = 10 mA
IC = 3 A
IB = 100 mA
IC = 5 A
IB = 250 mA
0.25
0.7
0.7
V
V
V
VBE(sat)
(1)
Base-emitter saturation
voltage
IC = 1 A
IB = 10 mA
1.0
V
hFE
(1)
DC current gain
IC = 1 A
VCE = 2 V
IC = 3 A
VCE = 2 V
IC = 5 A
VCE = 2 V
IC = 10 A
VCE = 2 V
100
100
80
140
100
40
300
1.
Pulsed duration = 300 µs, duty cycle
≤1.5 %
Obsolete
Product(s)
- Obsolete
Product(s)


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