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BF1211_2015 Datasheet(PDF) 8 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF1211_2015 Datasheet(HTML) 8 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
8 / 15 page 2003 Dec 16 8 Philips Semiconductors Product specification N-channel dual-gate MOS-FETs BF1211; BF1211R; BF1211WR handbook, halfpage 024 6 50 0 40 30 20 10 MDB837 IG1 ( µA) VG2-S (V) (1) (2) (3) (4) (5) Fig.13 Gate 1 current as a function of gate 2 voltage; typical values. VDS = 5 V; Tj =25 °C; RG1 =75kΩ (connected to VGG); see Fig.21. (1) VGG =5V. (2) VGG = 4.5 V. (3) VGG =4V. (4) VGG = 3.5 V. (5) VGG =3V. handbook, halfpage 012 4 0 −60 −40 −20 3 MDB838 −10 −50 −30 gain reduction (dB) VAGC (V) Fig.14 Typical gain reduction as a function of AGC voltage. VDS = 5 V; VGG = 5 V; RG1 =75kΩ (connected to VGG); see Fig.21; f = 50 MHz; Tamb =25 °C. handbook, halfpage 010 50 120 110 90 80 100 20 30 40 MDB839 Vunw (dB µV) gain reduction (dB) Fig.15 Unwanted voltage for 1% cross-modulation as a function of gain reduction; typical values. VDS = 5 V; VGG = 5 V; RG1 =75kΩ (connected to VGG); see Fig.21; f = 50 MHz; funw = 60 MHz; Tamb =25 °C. handbook, halfpage 050 20 0 4 8 12 16 10 20 30 40 MDB840 ID (mA) gain reduction (dB) Fig.16 Drain current as a function of gain reduction; typical values. VDS = 5 V; VGG = 5 V; RG1 =75kΩ (connected to VGG); see Fig.21; f = 50 MHz; Tamb =25 °C. |
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