BF1207_2015 datasheet(6/22 Pages) JMNIC

Part #	BF1207_2015

Description	Dual N-channel dual gate MOSFET

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Manufacturer	JMNIC [Quanzhou Jinmei Electronic Co.,Ltd.]

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6 / 22 page

9397 750 14955

Product data sheet

Rev. 01 — 28 July 2005

6 of 22

Philips Semiconductors

BF1207

Dual N-channel dual gate MOSFET

8.

Dynamic characteristics

8.1 Dynamic characteristics for ampliﬁer A

[1]

For the MOSFET not in use: VG1-S(B) = 0 V; VDS(B) =0V.

[2]

Measured in Figure 29 test circuit.

Table 8:

Dynamic characteristics for ampliﬁer A

Common source; Tamb =25 °C; VG2-S =4V; VDS =5V; ID = 18 mA. [1]

Symbol

Parameter

Conditions

Min

Typ

Max

Unit

yfs

forward transfer admittance

Tj =25 °C25

30

40

mS

Ciss(G1)

input capacitance at gate1

f = 100 MHz

-

2.2

2.7

pF

Ciss(G2)

input capacitance at gate2

f = 1 MHz

-

3.5

-

pF

Coss

output capacitance

f = 100 MHz

-

0.9

-

pF

Crss

reverse transfer capacitance

f = 100 MHz

-

20

-

fF

Gtr

power gain

BS =BS(opt); BL =BL(opt)

f = 200 MHz; GS = 2 mS; GL = 0.5 mS

30

34

38

dB

f = 400 MHz; GS = 2 mS; GL =1mS

26

30

34

dB

f = 800 MHz; GS = 3.3 mS; GL = 1 mS

21

25

29

dB

NF

noise ﬁgure

f = 11 MHz; GS = 20 mS; BS = 0 S

-

3.0

-

dB

f = 400 MHz; YS =YS(opt)

-

1.3

-

dB

f = 800 MHz; YS =YS(opt)

-

1.4

-

dB

Xmod

cross-modulation

input level for k = 1 %; fw = 50 MHz;

funw =60MHz

[2]

at 0 dB AGC

90

-

dB

µV

at 10 dB AGC

-

90

-

dB

µV

at 20 dB AGC

-

99

-

dB

µV

at 40 dB AGC

100

105

-

dB

µV

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BF1207_2015 Datasheet(PDF) 6 Page - Quanzhou Jinmei Electronic Co.,Ltd.

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