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BF862_2015 Datasheet(PDF) 5 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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BF862_2015 Datasheet(HTML) 5 Page - Quanzhou Jinmei Electronic Co.,Ltd. |
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5 / 12 page  2000 Jan 05 5 Philips Semiconductors Product specification N-channel junction FET BF862 handbook, halfpage 0 −0.5 −1 VGSoff (V) IDSS (mA) −1.5 40 30 10 0 20 MCD809 Fig.3 Drain saturation current as a function of gate-source cut-off voltage; typical values. VDS = 8 V; Tj =25 °C. handbook, halfpage 0 300 200 100 0 10 20 30 MCD810 IDSS (mA) gos ( µS) Fig.4 Common-source output conductance as a function of drain saturation current; typical values. VDS = 8 V; Tj =25 °C. handbook, halfpage 010 20 IDSS (mA) yfs (mS) 30 60 50 30 20 40 MCD811 Fig.5 Forward transfer admittance as a function of drain saturation current; typical values. VDS = 8 V; Tj =25 °C. handbook, halfpage 0 60 40 20 0 10 20 30 MCD812 ID (mA) yfs (mS) Fig.6 Forward transfer admittance as a function of drain current; typical values. VDS = 8 V; Tj =25 °C. |
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